Abstract
We present two versions of a radiation dosimeter, they are CMOS circuits built around a PMOSFET radiation sensor, compatible with standard technology. These dosimeters are intended to be used as built-in sensors in integrated circuits to signal misfunction danger due to radiation exposure, and so they have a binary output which changes its state when the total radiation dose exceeds a prefixed level. The first circuit is an improved version of a previously developed dosimeter which has less power consumption and sharper transfer characteristics. It has been built in ES2 1.0 µm technology and we present experimental results. The second circuit is under development, it is a clocked dosimeter which samples the dose only during a very short time at each clock period and then remains at rest, to further reduce the power consumption.
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Garcia-Moreno, E., Iñiguez, B., Roca, M. et al. Clocked Dosimeter Compatible with Digital CMOS Technology. Journal of Electronic Testing 12, 101–110 (1998). https://doi.org/10.1023/A:1008290024783
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DOI: https://doi.org/10.1023/A:1008290024783