Abstract
A device for sublimation molecular-beam deposition of P-doped silicon films on standard silicon wafers with diameters of up to 76 mm is described. Uniform deposition was performed through asymmetric arrangement of the sublimation source relative to the wafer, which was rotated about its axis.
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Shengurov, V.G., Shengurov, D.V. A Device for Sublimation Molecular-Beam Deposition of Silicon Films. Instruments and Experimental Techniques 44, 130–132 (2001). https://doi.org/10.1023/A:1004113924023
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DOI: https://doi.org/10.1023/A:1004113924023