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Trends in defect passivation technologies for perovskite-based photosensor

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Abstract

Perovskites are semiconductor materials with the ABX3 structure, and they possess several attractive features, such as a tunable bandgap, high photoluminescence quantum yield (PLQY), charge mobility, and carrier lifetime. Hence, they are widely used in various applications, such as light-emitting devices, solar cells, and photosensors. However, the perovskite defects, including grain boundaries, vacancies, ion migration, and structural deformation, interfere with the effective performance of the perovskite-based devices. The intrinsic instability and trap states caused by the perovskite defects decrease the stability and performance of perovskite-based devices. Two methods of defect passivation are carried out to enhance the effectiveness of perovskite-based devices: (1) polymers and (2) chemical additives. Defect passivation protects the surface to increase stability and reduce trap states, thereby enhancing the performance of perovskite-based devices. This article reviews the technologies for defect passivation in perovskite-based devices. The effect of defect passivation has been analyzed using various methodologies: (1) surface analysis using atomic force microscopy (AFM) and scanning electron microscopy (SEM), (2) bandgap and charge carrier lifetime analysis using photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra, (3) the trap-state density calculations based on the I–V curve under dark conditions, and (4) comparison of the critical parameters of the perovskite-based devices. This review provides an overview of the defect passivation technologies available to enhance the stability and applicability of perovskite-based photosensors.

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Data availability

Data will be made available on request.

Abbreviations

AFM:

Atomic force microscopy

SEM:

Scanning electron microscopy

PL:

Photoluminescence

TRPL:

Time-resolved photoluminescence

GBs:

Grain boundaries

C-AFM:

Conductive atomic force microscopy

XRD:

X-ray diffraction

TRPL:

Time-resolved PL

PMMA:

Polymethyl methacrylate

ITO:

Indium tin oxide

UPS:

UV photoelectron spectroscopy

VBM:

Valence band maximum

UV–vis:

Ultraviolet–visible

PTAA:

Poly(trial amine)

PSC:

Perovskite solar cell

tBBAI:

4-Tert-butyl-benzylammonium iodide

HTL:

Hole transfer layer

MHyI:

Methylhydrazine iodide

CPD:

Contact potential distribution

KPFM:

Kelvin probe force microscopy

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Acknowledgements

This work was supported by Korea Health Industry Development Institute (KHIDI) of Korea [HI19C1344] and the National Research Foundation (NRF) of Korea [RS-2023-00209053, NRF-2020R1A5A101913111].

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  1. Jun-Hee Park and Hong-Rae Kim co-first authors.

Authors and Affiliations

  1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, South Korea

    Jun-Hee Park, Hong-Rae Kim & Jae-Chul Pyun

  2. Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA

    Jun-Hee Park, Hong-Rae Kim & Dong Hee Son

  3. Printing Device Research Team, Samsung Display Co., Ltd., Yongin-si, 17113, South Korea

    Hong-Rae Kim

  4. Korea Institute of Science and Technology (KIST), Seoul, South Korea

    Min-Jung Kang

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Park, JH., Kim, HR., Kang, MJ. et al. Trends in defect passivation technologies for perovskite-based photosensor. J. Korean Ceram. Soc. 61, 15–33 (2024). https://doi.org/10.1007/s43207-023-00347-9

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