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Dielectric properties of silicon-doped α-alumina derived from sol–gel process

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Abstract

In this study, silicon-doped alumina (Al2O3) was synthesized using the sol–gel method. The composition and structure of silicon-doped alumina were analyzed using thermogravimetric-differential thermal analysis, X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy. As a result, it was found that the particle size of the silicon-doped alumina was uniform, and the silicon doped in the α-Al2O3 lattice occupied the space of the oxygen octahedron to form a structure based on the Al–O–Si bond. Also, because of measuring the change in dielectric constant according to the amount of doped silicon, a value of the dielectric constant of 3.1 at 1 GHz frequency when the silicon doping amount was 2%. Therefore, it is thought to be applicable to the fields of microelectronics, electronic packaging and interconnection, small antenna arrays, and capacitors that require low-k materials.

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Acknowledgements

This work was supported by the Korea Basic Science Institute (KBSI) National Research Facilities and Equipment Center (NFEC) grant funded by the Korea government (Ministry of Education) (No. 2019R1A6C1010031).

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Author notes

  1. Seong Guk Jeong and Can Wang contributed equally to this work.

Authors and Affiliations

  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea

    Seong Guk Jeong, Can Wang, Jong Hee Kim & Dae-Ho Yoon

  2. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea

    Dae-Ho Yoon

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  1. Seong Guk Jeong
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  2. Can Wang
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  3. Jong Hee Kim
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Correspondence to Dae-Ho Yoon.

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Jeong, S.G., Wang, C., Kim, J.H. et al. Dielectric properties of silicon-doped α-alumina derived from sol–gel process. J. Korean Ceram. Soc. 59, 671–678 (2022). https://doi.org/10.1007/s43207-022-00206-z

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  • DOI: https://doi.org/10.1007/s43207-022-00206-z

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