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Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation

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Abstract

Temperature, doping concentration, and gate work function all have a significant impact on performance of transistor during miniaturization. The design and in-depth investigation of a 10 nm gate length n-channel tri-gate junction less Fin Field Effect Transistor with respect to variation of temperature, doping level, and gate material work function through extensive simulation by incorporating quantum transport model constitute the innovative aspects of the current work. TCAD is used to model the intended device under various AC and DC biasing scenarios. The DC study results at temperature of 300 K, gate work function of 5.2 eV and doping concentration of 1019 cm− 3 demonstrate subthreshold swing of 80 mV/dec, high ON state current (ION) to OFF state current (IOFF) ratio 1.7 × 1011 and low DIBL of 12.8 mV/V. Based on these performance parameters, the devices demonstrate potential use for low power switching operations at lower dimensions.

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Authors and Affiliations

  1. Department of ETC, Parala Maharaja Engineering College, Berhampur, Odisha, 761003, India

    Sridhar Panda, Rajat Subhra Parida, G Chiranjibi Dora & Raghunandan Swain

  2. Department of ECE, Faculty of Science & Technology (Icfaitech), ICFAI foundation for higher education Hyderabad, Hyderabad, 501203, India

    Asisa Kumar Panigrahy

  3. Department of ECE, Andhra Engineering College, Nellore, AP, 524322, India

    Kishore Reddy Aduri

  4. School of EEE, VIT Bhopal University, Sehore, Madhya Pradesh, 466114, India

    M. Suresh

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  1. Sridhar Panda
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  2. Rajat Subhra Parida
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  3. G Chiranjibi Dora
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  4. Raghunandan Swain
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  5. Asisa Kumar Panigrahy
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Correspondence to Raghunandan Swain.

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Panda, S., Parida, R.S., Dora, G.C. et al. Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation. Trans. Electr. Electron. Mater. (2024). https://doi.org/10.1007/s42341-024-00543-2

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  • DOI: https://doi.org/10.1007/s42341-024-00543-2

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