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Relative Study of Analog Performance, Linearity, and Harmonic Distortion Between Junctionless and Conventional SOI FinFETs at Elevated Temperatures

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Abstract

This paper reports a comparative study of the analog performance, linearity and harmonic distortion characteristics between junctionless (JL) and conventional silicon-on-insulator (SOI) fin-type field-effect transistors (FinFETs) at elevated temperatures (300–500 K). A numerical device simulator is used for this study. Analog performance parameters of a JL FinFET are found to be less sensitive to variation in temperature as compared with its IM counterpart. Linearity is also found to be better for JL devices than IM devices for the entire temperature range. Moreover, harmonic distortion is found to be less for JL devices than IM devices.

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Authors and Affiliations

  1. Department of Electronic Science, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata, West Bengal, 700009, India

    Emona Datta & Abhijit Mallik

  2. Radio Physics and Electronics Department, University of Calcutta, Kolkata, 700009, India

    Avik Chattopadhyay

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  1. Emona Datta
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  2. Avik Chattopadhyay
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  3. Abhijit Mallik
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Correspondence to Emona Datta.

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Datta, E., Chattopadhyay, A. & Mallik, A. Relative Study of Analog Performance, Linearity, and Harmonic Distortion Between Junctionless and Conventional SOI FinFETs at Elevated Temperatures. J. Electron. Mater. 49, 3309–3316 (2020). https://doi.org/10.1007/s11664-020-08024-x

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