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Recent Advances in Gate Dielectrics for Enhanced Leakage Current Management and Device Performance

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Abstract

Gate oxide in metal oxide semiconductor field effect transistor (MOSFET) or gate dielectric layer in thin film transistor (TFT) plays an important role in the inhibition of leakage current. Thus, high-quality of insulating properties (> 10 MV/cm) and high resistance of gate dielectric have been required. The dimension of gate oxide needs to be reduced for the amplified on-current and switching speed. However, the dimension of the oxide, developed so far, has reached its limit, and leakage current is inevitable. The structural, processing, and material methods were categorically discussed to improve insulating properties in TFT and MOSFET for leakage reduction. The parameters including threshold voltage, subthreshold swing (SS), and off current of developed devices were compared in this paper. Through advanced structure application such as GAA, capacitorless DRAM, and hybrid dielectrics, MOSFETs could be scaled down with minimum leakage current. This review paper has been divided into sections covering structural, material, and process developments that have been researched to date. After briefly explaining each of these aspects, the paper concludes by proposing the application of NO precursor as a novel reactant material, deuterium-passivation, and process parameter optimization to address the current reduction for further research.

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Abbreviations

TFT:

Thin-film transistor

FET:

Field-effect transistor

LCD:

Liquid crystal display

IGZO:

Indium-gallium-zinc-oxide

MOS:

Metal-oxide-semiconductor

SCE:

Short channel effect

SOI:

Silicon on oxide

DIBL:

Drain-induced barrier lowering

DB:

Double gate

JL:

Junction-less

GAA:

Gate-all-around

LTPS:

Low-temperature polysilicon

MBC:

Multi bridge channel

LDD:

Lightly doped drain

SS:

Subthreshold swing

OFET:

Organic field effect transistor

DDBPA:

1,12-Dodecanediylbis (phosphonic acid)

ODPA:

N-Octadecyl phosphonic acid

DHDP:

4,4′-Dihydroxydipheny1

EPOXY:

Epoxy resin

TGA:

Thermo-gravimetric analysis

OSC:

Organic solar cell

PEN:

Polyethylene naphthalene

DELTA:

Depleted lean channel transistor

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Funding

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2022R1A4A1028702). This work was also supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program) (RS-2023-00266568) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

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Authors and Affiliations

  1. Department of Display Convergence Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Yeojin Jeong

  2. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Jaewoong Cho & Duy Phong Pham

  3. College of Information and Communication Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Junsin Yi

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  1. Yeojin Jeong
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  2. Jaewoong Cho
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Correspondence to Duy Phong Pham or Junsin Yi.

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Jeong, Y., Cho, J., Pham, D.P. et al. Recent Advances in Gate Dielectrics for Enhanced Leakage Current Management and Device Performance. Trans. Electr. Electron. Mater. (2024). https://doi.org/10.1007/s42341-024-00531-6

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  • DOI: https://doi.org/10.1007/s42341-024-00531-6

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