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Theoretical Investigations on Mechanical and Ultrasonic Characteristics of Gallium Nitride Semiconductor under High Pressure

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Abstract

The impact of pressure on the elastic and acoustic characteristics of the gallium nitride semiconductor are. analyzed using the L-J potential approach. This model is applied to evaluate the 2nd- and 3rd-order elastic parameters (SOECs and TOECs) for GaN semiconductor. Here in this work, the elastic constants are studied with pressure, and it is noticed that the elastic moduli of gallium nitride semiconductor increase monotonically as pressure increases. We also report that, the hexagonal GaN semiconductor is mechanically stable with pressures according to Born’s elastic stability criteria in the present work. The Voigt–Reuss–Hill method is used to compute elastic parameters such as Young’s modulus, bulk modulus, shear modulus, and Poisson’s ratio under the different pressures in the present work. The hardness, thermal conductivity, anisotropy constants, ultrasonic velocity, and melting point of GaN semiconductor are evaluated using estimated SOECs in the present work. The second-order coefficients are a tool for calculating acoustic velocities along the z-axis for the operating pressure that has been specified. The computation is also satisfactory in estimating the ultrasonic attenuation, Debye temperature, and thermal conductivity k (min) under various pressures (0–50 GPa) in this research work. GaN is important to solar designs because of its ability to offer significantly improved performance while reducing the energy and the physical space needed to deliver that performance.

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Acknowledgements

Dr. Pramod Kumar Yadawa acknowledged Veer Bahadur Singh Purvanchal University (133/VBSPU/IQAC/2022, Date. 23-03-2022) minor project grant (Code:50) and R & D grant from Department of Higher Education, Uttar Pradesh for financial support. Sachin Rai would like to express his thanks to Council for Scientific and Industrial Research – University Grant Comission (CSIR – UGC) for providing financial assistance in form of CSIR - Junior Research Fellowship (1500/CSIR-UGC NET dec, 2017) India.

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  1. Department of Physics, Prof. Rajendra Singh (Rajju Bhaiya) Institute of Physical Sciences for Study and Research, V. B. S. Purvanchal University, Jaunpur, Uttar Pradesh, 222003, India

    Aadesh K. Prajapati, Sachin Rai & Pramod K. Yadawa

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  1. Aadesh K. Prajapati
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  2. Sachin Rai
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Correspondence to Pramod K. Yadawa.

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Prajapati, A.K., Rai, S. & Yadawa, P.K. Theoretical Investigations on Mechanical and Ultrasonic Characteristics of Gallium Nitride Semiconductor under High Pressure. emergent mater. 5, 1985–1993 (2022). https://doi.org/10.1007/s42247-022-00419-2

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