Abstract
The quantification of ionizing energy deposition and non-ionizing energy deposition plays a critical role in precision neutron dosimetry and in the separation of the displacement damage effects and ionizing effects induced by neutron radiation on semiconductor devices. In this report, neutrons generated by the newly built China Spallation Neutron Source (CSNS) are simulated by Geant4 in semiconductor material silicon to calculate the ionizing and non-ionizing kerma factors. Furthermore, the integral method is applied to calculate neutron-induced ionizing at the CSNS and non-ionizing kerma factors according to the standard neutron nuclear database and the incident neutron spectrum. In addition, thermoluminescence dosimeters are utilized to measure the ionizing energy deposition and six series of bipolar junction transistors are used to measure the non-ionizing energy deposition based on their neutron damage constants. The calibrated kerma factors that were experimentally measured agreed well with the simulation and integral calculation results. This report describes a complete set of methods and fundamental data for the analysis of neutron-induced radiation effects at the CSNS on silicon-based semiconductor devices.
Similar content being viewed by others
References
V.P. Singh, N.M. Badiger, H.R. Vega-Carrillo, Neutron kerma factors and water equivalence of some tissue substitutes. Appl. Radiat. Isot. 103, 115–119 (2015). https://doi.org/10.1016/j.apradiso.2015.05.014
Z.Z. Liu, J.X. Chen, New calculations of neutron kerma coefficients and dose equivalent. J. Radiol. Prot. 28, 185–193 (2008). https://doi.org/10.1088/0952-4746/28/2/002
W.L. Bendel, Displacement and ionization fractions of fast neutron kerma in TLDs and Si. IEEE Trans. Nucl. Sci. 24(6), 2516–2520 (1977). https://doi.org/10.1109/TNS.1977.4329248
Standard practice for characterizing neutron energy fluence spectra in terms of an equivalent monoenergetic neutron fluence for radiation-hardness testing of electronics. (Annual book of ASTM Standards E722-14, USA, 2007). https://doi.org/10.1520/e0722-14
R.S. Caswell, J.J. Coyne, M.L. Randolph, Kerma factors for neutron energies below 30 MeV. Radiat. Res. 83(2), 217–254 (1980). https://doi.org/10.2307/3575276
J.R. Srour, J.W. Palko, Displacement damage effects in irradiated semiconductor devices. IEEE Trans. Nucl. Sci. 60(3), 1740–1766 (2013). https://doi.org/10.1109/TNS.2013.2261316
J.R. Srour, C.J. Marshall, P.W. Marshall, Review of displacement damage effects in silicon devices. IEEE Trans. Nucl. Sci. 50(3), 653–670 (2003). https://doi.org/10.1109/TNS.2003.813197
J.R. Schwank, M.R. Shaneyfelt, D.M. Fleetwood, J.A. Felix, P.E. Doddet, P. Paillet, V.F. Cavroisal, Radiation effects in MOS oxides. IEEE Trans. Nucl. Sci. 55(4), 1833–1853 (2008). https://doi.org/10.1109/TNS.2008.2001040
T.R. Oldham, F.B. McLean, Total ionizing dose effects in MOS oxides and devices. IEEE Trans. Nucl. Sci. 50(3), 483–499 (2003). https://doi.org/10.1109/TNS.2003.812927
D. Lambert, J. Baggio, V. Ferlet-Cavrois, O. Flament, F. Saigne, B. Sagnes, N. Buard, T. Carriere, Neutron-induced SEU in bulk SRAMs in terrestrial environment: simulations and experiments. IEEE Trans. Nucl. Sci. 51(6), 3435–3441 (2004). https://doi.org/10.1109/TNS.2004.839133
F. Miller, C. Weulersse, T. Carriere, N. Guibbaud, S. Morand, R. Gaillard, Investigation of 14 MeV neutron capabilities for SEU hardness evaluation. IEEE Trans. Nucl. Sci. 60(4), 2789–2796 (2013). https://doi.org/10.1109/TNS.2013.2241078
L.X. Chen, X.B. Tang, X.B. Jiang, D. Chen, Z.M. Zhao, Theoretical study on boiling heat transfer in the Xi’an pulsed reactor. Sci. China Technol. Sci. 56(1), 137–142 (2013). https://doi.org/10.1007/s11431-012-5042-z
L.Y. Zhang, H.T. Jing, J.Y. Tang, X.Q. Wang, Design and simulations of the neutron dump for the back-streaming white neutron beam at CSNS. Radiat. Phys. Chem. 127, 133–139 (2016). https://doi.org/10.1016/j.radphyschem.2016.06.023
J.B. Yu, J.X. Chen, L. Kang, J.F. Wu, J.Q. Zou, Thermal analysis and tests of W/Cu brazing for primary collimator scraper in CSNS/RCS. Nucl. Sci. Tech. 28, 46 (2017). https://doi.org/10.1007/s41365-017-0208-9
L.Y. Zhang, H.T. Jing, J.Y. Tang, Q. Li, X.C. Ruan, J. Ren, C.J. Ning, Y.J. Yu, Z.X. Tan, P.C. Wang, Y.C. He, X.Q. Wang, Design of back-streaming white neutron beam line at CSNS. Appl. Radiat. Isot. 132, 212–221 (2018). https://doi.org/10.1016/j.apradiso.2017.11.013
S. Agostinelli, Geant4—a simulation toolkit. Nucl. Instrum. Methods Phys. Res. Sect. A 506, 50–303 (2003). https://doi.org/10.1016/s0168-9002(03)01368-8
S. Tripathi, C. Upadhyay, C.P. Nagaraj, K. Devan, A. Venkatesan, K. Madhusoodanan, Investigation of enhancement in planar fast neutron detector efficiency with stacked structure using Geant4. Nucl. Sci. Tech. 28, 154 (2017). https://doi.org/10.1007/s41365-017-0315-7
P. Truscott, C. Dyer, A. Frydland et al., Neutron energy-deposition spectra measurements, and comparisons with Geant4 predictions. IEEE Trans. Nucl. Sci. 53, 1883–1889 (2006). https://doi.org/10.1109/TNS.2006.880936
B. Obryk, R. Villari, P. Batistoni, A. Colangeli, P. De Felice, N. Fonnesu, M. Kłosowski, S. Loreti, K. Malik, J. Nash, M. Pillon, M. Pimpinella, L. Quintieri, J.E.T. Contributors, TLD calibration for neutron fluence measurements at JET fusion facility. Nucl. Instrum. Methods Phys. Res., Sect. A 904, 202–213 (2018). https://doi.org/10.1016/j.nima.2018.07.050
J.R. Lei, Y.G. Yuan, L. Zhao, M.Z. Zhao, G.X. Gui, Investigations of the photon fluences in various n + γ mixed fields in the fast neutron reactor. Acta Physica Sinica 52(1), 53–57 (2003). https://doi.org/10.7498/aps.52.53
H.J. Barnaby, R.D. Schrimpf, K.F. Galloway, X. Li, J. Yang, C. Liu, Displacement damage in bipolar junction transistors: beyond Messenger–Spratt. IEEE Trans. Nucl. Sci. 64(1), 149–155 (2017). https://doi.org/10.1109/TNS.2016.2615628
G.C. Messenger, M.S. Ash, The Effects of Radiation on Electronic Systems (Van Nostrand, New York, 1986). https://doi.org/10.1007/978-94-017-5355-5
Acknowledgements
The authors would like to express sincere appreciation to the collaborators for their contributions, particularly Jing-Yu Tang and Zhi-Xin Tan at CSNS and Guang-Ning Zhu and Qiang Zhang at XAPR.
Author information
Authors and Affiliations
Corresponding author
Additional information
This work was supported by the National Natural Science Foundation of China (Nos. 11690040 and 11690043) and the Foundation of State Key Laboratory of China (Nos. SKLIPR1801Z and 6142802180304).
Rights and permissions
About this article
Cite this article
Jin, XM., Liu, Y., Su, CL. et al. Ionizing and non-ionizing kerma factors in silicon for China Spallation Neutron Source neutron spectrum. NUCL SCI TECH 30, 143 (2019). https://doi.org/10.1007/s41365-019-0664-5
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s41365-019-0664-5