Silicon application during vegetative propagation affects photosynthetic protein expression in strawberry

Abstract

We examined the effect of source, concentration, and application method of silicon (Si) on the growth, development, and photosynthetic capacity of Fragaria × ananassa ‘Maehyang’ and ‘Seolhyang’. We applied 0, 35, or 70 mg L⁻¹ Si in a potassium silicate (K₂SiO₃), sodium silicate (Na₂SiO₃), or calcium silicate (CaSiO₃) solution to plants via subirrigational supply or foliar application. Plant height of ‘Maehyang’ was highest with the 70 mg L⁻¹ Si Na₂SiO₃ foliar application, but it was not significantly different among treatments in ‘Seolhyang’. Crown size was not significantly affected by source, concentration, or application method in both cultivars. Elemental concentrations in the shoot and root of ‘Maehyang’ were the highest in the 35 mg L⁻¹ Si Na₂SiO₃ treatment for both application methods. Elemental concentrations in the shoot and root of ‘Seolhyang’ were the highest in the 70 mg L⁻¹ Si K₂SiO₃ foliar application. Photosynthetic proteins abundantly increased in both cultivars with the 35 or 70 mg L⁻¹ Si K₂SiO₃ treatment, for both application methods. Moreover, two important photosynthetic proteins, viz. PsaA and PsbA, were expressed and their expressions were higher with the 35 or 70 mg L⁻¹ Si K₂SiO₃ treatment, for both application methods. These results suggested that 35 or 70 mg L⁻¹ Si, supplied in the form of K₂SiO₃, promoted photosynthetic protein expressions the greatest, regardless of the application method, in both ‘Maehyang’ and ‘Seolhyang’.