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Structural, Microstructural, Magnetic, Ferroelectric, and Energy Bandgap Analysis of Heavily-Doped Pr at Bi Site of BiFeO3

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Abstract

A series of Pr substituted at the Bi site of BiFeO3 were synthesized by the sonochemical method. The Pr composition was varied from low to high level at Bi1-xPrxFeO3 (x = 0.0, 0.05, 0.10, and 0.15) to analyze the impact on structural, magnetic, ferroelectric, electrical, morphological, and semiconducting properties. The X-ray diffraction pattern reveals a phase transformation from rhombohedral (R3c) to orthorhombic (Pnma) phase in Bi0.85Pr0.15FeO3 sample. The diffuse reflectance spectra (DRS) exhibit bands in the ultraviolet and visible region. The energy bandgap values are in the range of 2.12 to 2.10 eV and the gap decreases as the concentration of Pr increases in Bi1-xPrxFeO3. Our study shows that the higher Pr dopant improved the ferroelectric and magnetic properties indicating that they are good multiferroic materials. It was noted that the leakage current and the remnant magnetization are less in 15% Pr substituted BiFeO3. The enhanced magnetic, ferroelelctric with low leakage current and low bandgap at high doping levels speculate the possibility of these materials for suitable applications. The doped samples are found to be smart materials as they exhibit multiferroic properties and dilute magnetic semiconducting properties.

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Acknowledgements

The authors would like to thank the anonymous reviewers for their critical reading and fruitful suggestions that improve the manuscript to present form.

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Authors and Affiliations

  1. Department of Physics, The Standard Fireworks Rajarathnam College for Women, Sivakasi, 626123, India

    A. Bismibanu

  2. Center for Research and Post Graduate Studies in Physics, Ayya Nadar Janaki Ammal College, Sivakasi, 626123, Tamil Nadu, India

    A. Bismibanu & M. Alagar

  3. Post Graduate Department of Physics, Mannar Thirumalai Naicker College, Madurai, 625004, Tamil Nadu, India

    M. Alagar

  4. Department of Physics, B. S. Abdur Rahman Institute of Science and Technology, Tamil Nadu, Vandalur, Chennai, 600 048, India

    I. B. Shameem Banu

  5. Department of Physics, Vel Tech Rangarajan DrSagunthala R&D Institute of Science and TechnologyTamil Nadu, Chennai, 600062, India

    Pradeep Reddy Vanga

  6. New Generation Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli, 620015, India

    Pradeep Reddy Vanga & M. Ashok

  7. Materials Chemistry and Metal Fuel Cycle Group, Indira Gandhi Centre for Atomic Research, Tamil Nadu, Kalpakkam, 603102, India

    Thangaraj Selvalakshmi

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  1. A. Bismibanu
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Bismibanu, A., Alagar, M., Banu, I.B.S. et al. Structural, Microstructural, Magnetic, Ferroelectric, and Energy Bandgap Analysis of Heavily-Doped Pr at Bi Site of BiFeO3. Braz J Phys 52, 1 (2022). https://doi.org/10.1007/s13538-021-01004-4

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  • DOI: https://doi.org/10.1007/s13538-021-01004-4

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