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Effects of Bismuth Doping on the Properties of CuOx Thin Films

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Abstract

This paper investigated the influence of deposition parameters such as oxygen content and direct current (DC) power on the characteristics of copper bismuth oxide (CuBiOx) thin films prepared by DC magnetron sputtering. According to the X-ray diffraction (XRD) results, for a fixed DC power of 40 W, only the CuBiOx film deposited with 20% oxygen content has a p-type CuBi2O4 phase, whereas for a fixed oxygen content of 20%, all CuBiOx films deposited at different DC powers show a p-type CuBi2O4 phase, suggesting the presence of optimized oxygen content for depositing p-type CuBiOx films. From the X-ray photoelectron spectroscopy (XPS) depth profile results, it can be confirmed that the CuBiOx films deposited with DC powers of 30, 40, and 50 W at a constant oxygen content of 20% have the compositions of CuBi1.6O4, CuBi1.7O4, and CuBi1.65O4, respectively, which is well supported by the XRD results. In addition, the optical band gaps (1.54–1.9 eV) of CuBiOx films deposited at DC powers of 30, 40 and 50 W at a constant oxygen content of 20% are similar to those reported for CuBi2O4 films prepared by the sol-gel method. In addition, the p-type conductivity of the CuBiOx thin film was confirmed by Hall Effect measurement results.

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Acknowledgements

This study was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1D1A3A0310351513).

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  1. Department of Materials Science and Engineering, Hoseo University, Asan, Chungnam, 31499, Republic of Korea

    Sangwoo Lee

  2. Department of Automotive ICT Engineering, Hoseo University, Dangjin, Chungnam, 31702, Republic of Korea

    Eui-Jung Yun

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Lee, S., Yun, EJ. Effects of Bismuth Doping on the Properties of CuOx Thin Films. Electron. Mater. Lett. 19, 398–404 (2023). https://doi.org/10.1007/s13391-023-00408-5

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