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Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off

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Abstract

Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronic devices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patterns of epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructures on Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr3Al2O6) is used as a lift-off hard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and be selectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia (YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial (La, Sr)MnO3/CeO2/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment to remove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realization of multifunctional oxide-integrated electronics is provided in this study.

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Acknowledgements

The authors gratefully acknowledge the financial support from the National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and ICT (NRF-2020M3D1A2101933) and the Yonsei-KIST Convergence Program. H.J.C and H.C was supported by a National Research Council of Science & Technology (NST) Grant awarded by the Korea government (MSIT) (No. CAP-18-04-KRISS).

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Author notes

  1. Ruiguang Ning and Soo Young Jung have contributed equally to this work.

Authors and Affiliations

  1. Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea

    Ruiguang Ning, Soo Young Jung, Min-Seok Kim, Hyung-Jin Choi, Jun Young Lee, Sung-Jin Jung, Ji-Soo Jang & Seung-Hyub Baek

  2. Nanomaterials Science and Engineering, KIST School, Korea University of Science and Technology, Seoul, 02792, Republic of Korea

    Ruiguang Ning & Seung-Hyub Baek

  3. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea

    Soo Young Jung, Min-Seok Kim & Ho Won Jang

  4. Advanced Analysis and Data Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea

    Haneul Choi, Byeong-hyeon Lee, Sung Ok Won & Hye Jung Chang

  5. Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea

    Haneul Choi, Kyu Hyoung Lee & Seung-Hyub Baek

  6. Bionics Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea

    Jin Soo Park & Byung Chul Lee

  7. Department of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea

    Jin Soo Park

  8. Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea

    Ho Won Jang

  9. Nanoscience and Technology, KIST School, Korea University of Science and Technology, Seoul, 02792, Republic of Korea

    Hye Jung Chang

  10. Yonsei-KIST Convergence Research Institute, Seoul, 02792, Republic of Korea

    Kyu Hyoung Lee & Seung-Hyub Baek

Author notes

  1. The original online version of this article was revised due to some of the references were missing and the missed references have been included.

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    1. Ruiguang Ning
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    Ning, R., Jung, S.Y., Choi, H. et al. Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off. Electron. Mater. Lett. 19, 192–199 (2023). https://doi.org/10.1007/s13391-022-00386-0

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