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Pure ultraviolet emission from ZnO quantum dots-based/GaN heterojunction diodes by MgO interlayer

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Abstract

We demonstrate the fabrication and characterization of ZnO/GaN-based heterojunction light-emitting diodes (LEDs) by using air-stable and solution-processable ZnO quantum dots (QDs) with a thin MgO interlayer acting as an electron blocking layer (EBL). The ZnO QDs/MgO/p-GaN heterojunction can only display electroluminescence (EL) characteristic in reverse bias regime. Under sufficient reverse bias, a fairly pure ultraviolet EL emission located at 370 nm deriving from near band edge of ZnO with a full width at half maximum (FWHM) of 8.3 nm had been obtained, while the deep-level emission had been almost totally suppressed. The EL origination and corresponding carrier transport mechanisms were investigated qualitatively in terms of photoluminescence (PL) results and energy band diagram.

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China

    Cheng Chen, Renli Liang, Jingwen Chen, Jun Zhang, Shuai Wang, Chong Zhao, Wei Zhang, Jiangnan Dai & Changqing Chen

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  1. Cheng Chen
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  2. Renli Liang
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  3. Jingwen Chen
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  4. Jun Zhang
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  5. Shuai Wang
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  6. Chong Zhao
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  7. Wei Zhang
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  8. Jiangnan Dai
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  9. Changqing Chen
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Correspondence to Jiangnan Dai.

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Chen, C., Liang, R., Chen, J. et al. Pure ultraviolet emission from ZnO quantum dots-based/GaN heterojunction diodes by MgO interlayer. Electron. Mater. Lett. 13, 313–317 (2017). https://doi.org/10.1007/s13391-017-6234-2

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  • DOI: https://doi.org/10.1007/s13391-017-6234-2

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