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Ultraviolet electroluminescence from n-ZnO/i-MgO/p+-GaN heterojunction light-emitting diodes fabricated by RF-magnetron sputtering

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Abstract

Based on the easily controllable radio frequency magnetron sputtering, n-ZnO and i-MgO thin films were fabricated on p+-GaN substrate to construct heterojunctional light-emitting diodes for ultraviolet emission from the near band edge exciton recombination of ZnO. Effects of the insulator MgO layer on the electroluminescent performance of the n-ZnO/i-MgO/p+-GaN light-emitting diodes have been investigated. It was found that the light-emitting diode presented stronger near band-edge emission with blue shift emission peak under the lower working current when i-MgO layer was inserted. The fabrication process, characteristics and the mechanism were discussed in detail.

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Acknowledgments

This work was supported by NSFCs (60725413, 60976002), “973” Program (2011CB302004 and 2007CB936300) and MOE (309015).

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Authors and Affiliations

  1. State Key Laboratory of Bioelectronics, and Advanced Photonics Center, School of Biological Science and Medical Engineering, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People’s Republic of China

    G. Y. Zhu, J. T. Li, Z. L. Shi, Y. Lin, G. F. Chen, T. Ding, Z. S. Tian & C. X. Xu

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  1. G. Y. Zhu
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  2. J. T. Li
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Correspondence to C. X. Xu.

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Zhu, G.Y., Li, J.T., Shi, Z.L. et al. Ultraviolet electroluminescence from n-ZnO/i-MgO/p+-GaN heterojunction light-emitting diodes fabricated by RF-magnetron sputtering. Appl. Phys. B 109, 195–199 (2012). https://doi.org/10.1007/s00340-012-5161-z

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  • DOI: https://doi.org/10.1007/s00340-012-5161-z

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