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Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes

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Abstract

HASynthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1 - 2 tubes/μm with high growth quality as shown by Raman analysis.

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References

  1. L. Ding, D. Yuan, and J. Liu, J. Am. Chem. Soc. 130, 5428 (2008).

    Article  Google Scholar 

  2. I. Ibrahim, A. Bachmatiuk, F. Börrnert, J. Blüher, U. Wolff, J. H. Warner, B. Büchner, G. Cuniberti, and M. H. Rümmeli, Carbon 49, 5029 (2011).

    Article  Google Scholar 

  3. J.-J. Kim, B.-J. Lee, S.-H. Lee, and G.-H. Jeong, Nanotechnology 23, 105607 (2012).

    Article  Google Scholar 

  4. A. Rutkowska, D. Walker, S. Gorfman, P. A. Thomas, and J. V. Macpherson, J. Phys. Chem. C 113, 17087 (2009).

    Article  Google Scholar 

  5. H. Ago, Y. Kayo, and M. Tsuji, Jpn. J. Appl. Phys. 51, 04DN02 (2012).

    Article  Google Scholar 

  6. S. Han, X. Liu, and C. Zhou, J. Am. Chem. Soc. 127, 5294 (2005).

    Article  Google Scholar 

  7. Q. Yu, G. Qin, H. Li, Z. Xia, Y. Nian, and S.-S. Pei, J. Phys. Chem. B 110, 22676 (2006).

    Article  Google Scholar 

  8. C. Kocabas, S. J. Kang, T. Ozel, M. Shim, and J. A. Rogers, J. Phys. Chem. C 111, 17879 (2007).

    Article  Google Scholar 

  9. Y. Chen, Y. Zhang, Y. Hu, L. Kang, S. Zhang, H. Xie, D. Liu, Q. Zhao, Q. Li, and J. Zhang, Adv. Mater. 26, 5898 (2014).

    Article  Google Scholar 

  10. M. M. Shulaker, G. Hills, N. Patil, H. Wei, H.-Y. Chen, H.-S. P. Wong, and S. Mitra, Nature 501, 526 (2013).

    Article  Google Scholar 

  11. A. Szabó, C. Perri, A. Csató, G. Giordano, D. Vuono, and J. B. Nagy, Materials 3, 3092 (2010).

    Article  Google Scholar 

  12. I. Ibrahim, A. Bachmatiuk, J. H. Warner, B. Büchner, G. Cuniberti, and M. H. Rümmeli, Small 8, 1973 (2012).

    Article  Google Scholar 

  13. J. An, Z. Zhan, H. K. S. V. Mohan, G. Sun, R. V. Hansen, and L. Zheng, J. Mater. Chem. C 3, 2215 (2015).

    Article  Google Scholar 

  14. Z.-Y. Zhan, Y.-N. Zhang, G.-Z. Sun, L.-X. Zheng, and K. Liao, Appl. Surface Sci. 257, 7704 (2011).

    Article  Google Scholar 

  15. S. J. Kang, C. Kocabas, T. Ozel, M. Shim, N. Pimparkar, M. A. Alam, S. V. Rotkin, and J. A. Rogers, Nat Nano 2, 230 (2007).

    Article  Google Scholar 

  16. T. Wang, S. Chen, D. Jiang, Y. Fu, K. Jeppson, L. Ye, and J. Liu, IEEE Electron. Dev. Lett. 33, 420 (2012).

    Article  Google Scholar 

  17. T. Wang, K. Jeppson, L. Ye, and J. Liu, Small 7, 2313 (2011).

    Article  Google Scholar 

  18. P. Finnie, A. Li-Pook-Than, J. Lefebvre, and D. G. Austing, Carbon 44, 3199 (2006).

    Article  Google Scholar 

  19. P. Finnie, J. Bardwell, I. Tsandev, M. Tomlinson, M. Beaulieu, J. Fraser, and J. Lefebvre, J. Vacuum Sci. Technol. A 22, 747 (2004).

    Article  Google Scholar 

  20. W. Mu, S. Sun, D. Jiang, Y. Fu, M. Edwards, Y. Zhang, K. Jeppson, and J. Liu, J. Electron. Mater. 44, 2898 (2015).

    Article  Google Scholar 

  21. D. Jiang, W. Mu, S. Chen, Y. Fu, K. Jeppson, and J. Liu, IEEE Electron. Dev. Lett. 36, 499 (2015).

    Article  Google Scholar 

  22. N. Patil, A. Lin, E. R. Myers, K. Ryu, A. Badmaev, C. Zhou, H.-S. P. Wong, and S. Mitra, IEEE Trans. Nanotechnol. 8, 498 (2009).

    Article  Google Scholar 

  23. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).

    Article  Google Scholar 

  24. A. V. Melechko, V. I. Merkulov, T. E. McKnight, M. A. Guillorn, K. L. Klein, D. H. Lowndes, and M. L. Simpson, J. Appl. Phys. 97, 041301 (2005).

    Article  Google Scholar 

  25. Y. He, D. Li, T. Li, X. Lin, J. Zhang, Y. Wei, P. Liu, L. Zhang, J. Wang, Q. Li, S. Fan, and K. Jiang, Nano Res. 7, 981 (2014).

    Article  Google Scholar 

  26. Y. Li, R. Cui, L. Ding, Y. Liu, W. Zhou, Y. Zhang, Z. Jin, F. Peng, and J. Liu, Adv. Mater. 22, 1508 (2010).

    Article  Google Scholar 

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Authors and Affiliations

  1. SMIT Center, School of Mechanical Engineering and Automation, Institute of NanomicroEnergy, Shanghai University, Jiading Campus, 20 Chengzhong Road, 201800, Shanghai, China

    Wei Mu, Shirong Huang, Kjell Jeppson & Johan Liu

  2. Electronics Materials and Systems Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96, Gothenburg, Sweden

    Wei Mu, Michael Edwards, Yifeng Fu, Kjell Jeppson & Johan Liu

  3. Department of Nano Applied Engineering, Kangwon National University, Chuncheon, 24341, Korea

    Eun-Hye Kwak & Goo-Hwan Jeong

  4. AIXTRON Nanoinstruments Ltd., Swavesey, Cambridge, CB24 4FQ, UK

    Bingan Chen & Kenneth Teo

  5. SHT Smart High Tech AB, Aschebergsgatan 46, SE-411 33, Gothenburg, Sweden

    Yifeng Fu

Authors
  1. Wei Mu
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  2. Eun-Hye Kwak
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  3. Bingan Chen
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  4. Shirong Huang
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  5. Michael Edwards
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  6. Yifeng Fu
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  7. Kjell Jeppson
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  8. Kenneth Teo
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  9. Goo-Hwan Jeong
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  10. Johan Liu
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Corresponding authors

Correspondence to Goo-Hwan Jeong or Johan Liu.

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Mu, W., Kwak, EH., Chen, B. et al. Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes. Electron. Mater. Lett. 12, 329–337 (2016). https://doi.org/10.1007/s13391-016-6012-6

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  • DOI: https://doi.org/10.1007/s13391-016-6012-6

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