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Investigation of charge trapping mechanism for nanocrystal-based organic nonvolatile floating gate memory devices by band structure analysis

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Abstract

This paper investigates the charge trapping mechanism and electrical performance of CdSe nanocrystals, such as nanoparticles and nanowires in organic floating gate memory devices. Despite of same chemical component, each nanocrystals show different electrical performances with distinct trapping mechanism. CdSe nanoparticles trap holes in the memory device; on the contrary, nanowires trap electrons. This phenomenon is mainly due to the difference of energy band structures between nanoparticles and nanowires, measured by the ultraviolet photoelectron spectroscopy. Also, we investigated the memory performance with C-V characteristics, charging and discharging phenomena, and retention time. The nanoparticle based hole trapping memory device has large memory window while the nanowire based electron trapping memory shows a narrow memory window. In spite of narrow memory window, the nanowire based memory device shows better retention performance of about 55% of the charge even after 104 sec of charging. The contrasting performance of nanoparticle and nanowire is attributed to the difference in their energy band and the morphology of thin layer in the device.

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Authors and Affiliations

  1. School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea

    Dong-Hoon Lee, Ki-Tae Lim, Eung-Kyu Park & Yong-Sang Kim

  2. Dept. of Physics, Sungkyunkwan University, Suwon, 16419, Korea

    Ha-Chul Shin & Joung-Real Ahn

  3. Dept. of Chemistry Applied Chemistry, Hanyang University, Ansan, 15588, Korea

    Chung Soo Kim & Jin Ho Bang

  4. Department of Electronics Engineering, Konkuk University, Seoul, 05029, Korea

    Kee-Chan Park

Authors
  1. Dong-Hoon Lee
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  2. Ki-Tae Lim
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  3. Eung-Kyu Park
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  4. Ha-Chul Shin
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  5. Chung Soo Kim
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  8. Jin Ho Bang
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  9. Yong-Sang Kim
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Correspondence to Yong-Sang Kim.

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These authors contributed equally to this work

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Lee, DH., Lim, KT., Park, EK. et al. Investigation of charge trapping mechanism for nanocrystal-based organic nonvolatile floating gate memory devices by band structure analysis. Electron. Mater. Lett. 12, 376–382 (2016). https://doi.org/10.1007/s13391-016-5448-z

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  • DOI: https://doi.org/10.1007/s13391-016-5448-z

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