Abstract
In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-μm-thick GaN film grown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010°C and a growth pressure of 50 Torr.
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Tran, B.T., Lin, KL., Sahoo, K.C. et al. Effect of multiple AlN layers on quality of GaN films grown on Si substrates. Electron. Mater. Lett. 10, 1063–1067 (2014). https://doi.org/10.1007/s13391-014-3164-0
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DOI: https://doi.org/10.1007/s13391-014-3164-0