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Analysis of the electrical characteristics and structure of Cu-Filled TSV with thermal shock test

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Abstract

The electrical characteristics and failure of a Through-Silicon Via (TSV) were investigated using a thermal shock test. The electrical characteristics, such as resistance (R), self-inductance (L s ), self-capacitance (C s ), and mutual capacitance (C m ), were extracted using a T-equivalent circuit. A cross section of the Cu-filled via was observed by field emission-scanning electron microscopy and the electrical characteristics were measured using a commercial Agilent E4980A LCR Meter. The experimental results revealed R, L s , C s , and C m values of 3.2 mΩ, 29.3 pH, 12 fF, and 0.42 pF, respectively. C m occurred between the charge-holding TSVs, which changed from 0.42 pF to 0.26 pF due to a permittivity transition of the Cu ion drift. After 1,000 cycles of a thermal shock test, cracks were observed between the opening and around the side of the TSV and Si wafer due to mismatch of the coefficient of thermal expansion between the Cu-plug and Si substrate.

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Authors and Affiliations

  1. Dept. of Materials Science and Engineering, University of Seoul, Seoul, 130-743, Korea

    Il Ho Jeong, Myong Hoon Roh & Jae Pil Jung

  2. Defense Agency for Technology and Quality, Seoul, 100-791, Korea

    Il Ho Jeong

  3. Faculty of Science, University of Western Ontario, London, N6A 3K7, Canada

    Flora Jung

  4. Dept. of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Canada

    Wan Ho Song & Michael Mayer

Authors
  1. Il Ho Jeong
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  2. Myong Hoon Roh
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  3. Flora Jung
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  4. Wan Ho Song
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  5. Michael Mayer
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  6. Jae Pil Jung
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Correspondence to Jae Pil Jung.

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Jeong, I.H., Roh, M.H., Jung, F. et al. Analysis of the electrical characteristics and structure of Cu-Filled TSV with thermal shock test. Electron. Mater. Lett. 10, 649–653 (2014). https://doi.org/10.1007/s13391-013-3260-6

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  • DOI: https://doi.org/10.1007/s13391-013-3260-6

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