Skip to main content
SpringerLink
Log in

Static induction transistor using TaN thin film as gate electrode for high-performance application

  • Published:
Electronic Materials Letters Aims and scope Submit manuscript

Abstract

In this study, static induction transistor (SIT) using TaN thin film as gate electrode was fabricated and the characteristics of this device were investigated. The electrical characteristics showed that the drain-source current was controlled by the bias voltage that applied to the TaN gate electrode. The typical SIT operations with non-saturation property and a transition from linear to nonlinear behavior were observed in the drainsource I–V characteristics. Furthermore, compared with the traditional devices, this SIT device can obtain a high working current (∼5 mA) at a low driving voltage (∼3 V) with a small threshold voltage (∼1 V), showing its high potential for high current and low voltage application.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Muccini, Nat. Mater. 5, 605 (2006).

    Article  Google Scholar 

  2. T. Someya, Y. Kato, S. Iba, Y. Noguchi, T. Sekitani, H. Kawaguchi, and T. Sakurai, IEEE Trans. Elec. Dev. 52, 2502 (2005).

    Article  Google Scholar 

  3. Y. Noguchi, T. Sekitani, and T. Someya, Appl. Phys. Lett. 89, 253507 (2006).

    Article  Google Scholar 

  4. Y. Kato, T. Sekitani, Y. Noguchi, T. Yokota, M. Takamiya, T. Sakurai, and T. Someya, IEEE Trans. Elec. Dev. 57, 995 (2010).

    Article  Google Scholar 

  5. Z. Bao, A. J. Lovinger, and A. Dodabalapur, Appl. Phys. Lett. 69, 3066 (1996).

    Article  Google Scholar 

  6. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Elec. Dev. 44, 1325 (1997).

    Article  Google Scholar 

  7. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. 14, 99 (2002).

    Article  Google Scholar 

  8. K. Kudo, D. X. Wang, M. Iizuka, S. Kuniyoshi, and K. Tanaka, Thin Solid Films 331, 51 (1998).

    Article  Google Scholar 

  9. D. X. Wang, Y. Tanaka, M. Iizuka, S. Kuniyoshi, K. Kudo, and K. Tanaka, Jpn. J. Appl. Phys. 38, 256 (1999).

    Article  Google Scholar 

  10. C. M. Joseph and C. S. Menon, Mater. Lett. 51, 200 (2001).

    Article  Google Scholar 

  11. S. Zorba and Y. Gao, Appl. Phys. Lett. 86, 193508 (2005).

    Article  Google Scholar 

  12. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom, IEEE Elec. Dev. Lett. 18, 87 (1997).

    Article  Google Scholar 

  13. G. Horowitz and M. E. Hajlaoui, Adv. Mater. 12, 1046 (2000).

    Article  Google Scholar 

  14. M. E. Hajlaoui, F. Garnier, L. Hassine, F. Kouki, and H. Bouchriha, Synth. Met. 129, 215 (2002).

    Article  Google Scholar 

  15. T. W. Kelley and C. D. Frisbie, J. Phys. Chem. B 105, 4538 (2001).

    Article  Google Scholar 

  16. C. Y. Chen, Y. C. Chao, H. F. Meng, and S. F. Horng, Appl. Phys. Lett. 93, 223301 (2008).

    Article  Google Scholar 

  17. Y. C. Chao, M. C. Ku, W. W. Tsai, H. W. Zan, H. F. Meng, H. K. Tsai, and S. F. Horng, Appl. Phys. Lett. 97, 223307 (2010).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Z. W. Zheng

  2. Institute of Photonic System, National Chiao Tung University, Hsinchu, 300, Taiwan

    Y. C. Chen

Authors
  1. Z. W. Zheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Y. C. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Z. W. Zheng.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zheng, Z.W., Chen, Y.C. Static induction transistor using TaN thin film as gate electrode for high-performance application. Electron. Mater. Lett. 10, 383–385 (2014). https://doi.org/10.1007/s13391-013-3154-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s13391-013-3154-7

Keywords

Search

Navigation