Abstract
Squarer-divider (SD) is a basic circuit that is used as a fundamental component in designing of various mathematical circuits. A high-performance SD circuit can be designed using MOS translinear loop (MTL) with transistors operating in strong inversion region. In this paper, a simple high-performance SD circuit operating at very low voltage of 0.7 V has been designed by MTL transistors biased using flipped voltage follower (FVF) cell. The FVF cell helps in reducing the voltage headroom consumption of stacked MOSFETs and thereby reduces overall supply voltage requirement of the circuit. It offers a bandwidth (BW) of 44.24 MHz and output resistance (rout) of 6.9KΩ when simulated in Cadence Virtuoso environment using 0.18 µm GPDK technology file. Further in the paper, another low voltage SD circuit (SD-II) has been proposed that offers higher BW and rout. These characteristics have been achieved by replacing floating-gate MOSFETs of original SD circuit with quasi-floating gate MOSFETs. Proposed SD-II shows an improvement in BW and rout by a factor of 1.2 and 1.31, respectively. Additional enhancement in BW is observed by the use of a compensating resistor between gate terminals of MOSFETs forming current mirror at output side (SD-III). To show the robustness of proposed SD-III in complete design space and with variations in temperature, corner and temperature analyses have been carried out. Application of proposed SD-III in implementing a low voltage RMS-to-DC converter operating at 0.7 V has been presented to show the practical usability of the proposed circuits.
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Abbreviations
- A I :
-
Current gain
- C gb :
-
Parasitic capacitance present between bulk and gate terminal
- C gd :
-
Parasitic capacitance present between drain and gate terminal
- C gs :
-
Parasitic capacitance present between source and gate terminal
- C n :
-
Input capacitor of nth secondary gate of QFGMOS
- f 0 :
-
Cut-off frequency of QFGMOS
- gmi :
-
Small-signal transconductance of ith MOSFET
- I B :
-
Biasing current
- I D n :
-
Drain current of nth MOSFET
- I in :
-
Input current
- I out :
-
Output current
- I rms :
-
Output current of RMS-to-DC converter
- Ix :
-
Biasing current of FVF loop
- R g :
-
Resistance seen by capacitor Cg of Fig. 5 in SD-I
- R f :
-
Resistance seen by capacitor Cf of Fig. 5 in SD-I
- R large :
-
Resistance offered by transistor in cut-off mode, connected at gate terminal of QFGMOS
- r 0 i :
-
Small-signal output resistance of ith MOSFET
- r out :
-
Small-signal output resistance of proposed SD circuit
- Rx :
-
A resistor connected between gate-source capacitances of MOSFETs M7 and M8 of SD-III to increase bandwidth
- s ZP :
-
Location of poles
- τ LPF :
-
Time constant of low pass filter
- τ H :
-
High-frequency time constants
- V GSn :
-
Gate to source voltage of nth MOSFET
- V QFG :
-
Voltage at quasi-floating gate of QFGMOS
- V th :
-
Threshold voltage
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Aggarwal, B., Chhabra, A. & Yadav, S. A New FVF and QFGMOS Based High-Performance Low Voltage Analog Squarer-Divider Circuit. Arab J Sci Eng 47, 14435–14453 (2022). https://doi.org/10.1007/s13369-022-06752-2
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DOI: https://doi.org/10.1007/s13369-022-06752-2