Abstract
Surface crystallization processes in the 80GeSe2–20Ga2Se3 glasses thermally annealed at 380 °C for 25 and 80 h were studied by both experimental methods and statistical analysis of images using Python scripts. It is shown that GeSe2 phase is formed as a result of annealing unevenly on glass surface in the form of thread-like crystallites with a length of 1–3 μm. The obtained dependences of number crystallites on their geometric parameters indicate a significant increase in their size (area, length and width) with an increase in the duration of annealing up to 80 h. At the same time, the crystallite growth orientation does not change and is 50°, 90° and 130°. Optimal conditions for crystallization processes can be selected based on the obtained results to prepare stable 80GeSe2–20Ga2Se3 glasses with predetermined optical properties.
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Acknowledgements
This research was supported by the Ministry of Education and Science of Ukraine under Project No 0122U000807 and the National Research Foundation of Ukraine under Project 2020.02/017 “Light-generation low-dimensional structures with polarized luminescence based on organic and inorganic materials.” H.K. thanks to Dr. L. Calvez for sample preparation, Dr. B. Kulyk for assistance in AFM experiment and Prof. O. Shpotyuk for discussion.
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Klym, H., Kushnir, O. & Karbovnyk, I. Surface crystallization of GeSe2 in the 80GeSe2–20Ga2Se3 glasses caused by thermal annealing: experimental study and statistical analysis. Appl Nanosci 13, 7445–7454 (2023). https://doi.org/10.1007/s13204-023-02910-6
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DOI: https://doi.org/10.1007/s13204-023-02910-6