Abstract
Peculiarities of crystallization behavior of the 80GeSe2-20Ga2Se3 chalcogenide glasses caused by thermal treatment at 380 °C for 10, 25, 50, 80 and 100 h were studied using X-ray diffraction method. It is shown that crystallization processes indicate on the formation of GeGa4Se8, Ga2Se3 and GeSe2 crystallizes in nanoparticle form in the inner structure of the studied glasses. Crystallites are formed in different modifications: GeGa4Se phase of low-temperature and high-temperature modifications as well as α, γ-modification of Ga2Se3 phases. The most significant changes in the 80GeSe2-20Ga2Se3 glasses occur after thermal treatment for 25 and 50 h. Following crystallization for 80 and 100 h does not reflect the increase in intensity which indicate the further formation of phases in the inner structure of glasses.
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Acknowledgements
H. Klym thanks to the Ministry of Education and Science of Ukraine for support, Dr. L. Calvez for sample preparation, Prof. O. Shpotyuk for discussion, and Dr. P. Demchenko for assistance in XRD experiments.
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Klym, H., Karbovnyk, I., Vasylchyshyn, I. (2021). On the Crystallization Ability of 80GeSe2-20Ga2Se3 Glasses. In: Fesenko, O., Yatsenko, L. (eds) Nanomaterials and Nanocomposites, Nanostructure Surfaces, and Their Applications . NANO 2020. Springer Proceedings in Physics, vol 263. Springer, Cham. https://doi.org/10.1007/978-3-030-74741-1_5
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