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Sanjay, Kumar, V. & Vohra, A. Correction to: Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance–Voltage Characteristics for Upcoming Sub 10 nm Technology Node. Silicon (2024). https://doi.org/10.1007/s12633-024-02955-4
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DOI: https://doi.org/10.1007/s12633-024-02955-4