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Seven Strategies to Suppress the Ambipolar Behaviour in CNTFETs: a Review

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Abstract

Ambipolar behaviour is the cloud that surrounds the desired nanoelectronics device, the carbon nanotube field effect transistor (CNTFET). Despite all the advancements in the fabrication processes, CNTFETs are not being used in logic applications. The suppression of ambipolar behaviour in CNTFETs will pave way for many high-performance circuits and designs. Novel ideas to suppress this behaviour are offered in the literature. Therefore, to help researchers to come up with more novel ideas, this paper reviews the presented research papers which have suggested and demonstrated some exemplary methods for the suppression of ambipolar characteristics in CNTFETs. This paper has categorized the various methods into seven interventions. These interventions ensure robust and reliable devices exhibiting unipolar behaviour.

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Acknowledgments

The author would like to thank Prof. Anand A Samuel for inspiring me to write a review paper.

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    P Reena Monica

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Reena Monica, P. Seven Strategies to Suppress the Ambipolar Behaviour in CNTFETs: a Review. Silicon 14, 10199–10216 (2022). https://doi.org/10.1007/s12633-022-01813-5

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