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The Effect of Low-Temperature Annealing on the Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors

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Abstract

Carbon nanotube network field-effect transistors (CNT-FETs) have been recognized as strong candidates for post-Si era electronics due to their higher speed, lower power consumption, and high sensing capabilities. In this study, CNT-FET structures were fabricated on heavily doped Si substrates with an oxide layer. To investigate the effect of low-temperature annealing on the electrical properties, the transistors were annealed at 120 °C for 1 h, the transfer and output characteristics of the transistors were measured, and the key electrical parameters, such as field-effect mobility, effective mobility, threshold voltage, interface states, transconductance, drain conductance, resistance, and hysteresis gap values were obtained. A series of device parameter evaluation results showed that low-temperature annealing treatment in air can effectively improve the on-state current, increase the mobility, and reduce the device threshold voltage and subthreshold swing. In addition, a large decrease in contact resistance, from 1.9 MΩ to 12.3 kΩ, was observed after low-temperature annealing. It has been found that low-temperature annealing has a tremendous improvement effect on the electrical characteristics of CNT-FETs and should be considered during the production and design stages of CNT transistors.

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Acknowledgments

H. Altuntas and F. Oke-Altuntas gratefully acknowledges TUBITAK BIDEB 2219 Fellowship and Advanced Technology Institute (ATI) for their cooperation.

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Authors and Affiliations

  1. Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK

    Halit Altuntas, Feyza Oke-Altuntas & S. R. P. Silva

  2. Department of Physics, Faculty of Science, Cankiri Karatekin University, 18100, Cankiri, Turkey

    Halit Altuntas

  3. Department of Biology, Faculty of Science, Gazi University, 06500, Ankara, Turkey

    Feyza Oke-Altuntas

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  1. Halit Altuntas
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Correspondence to Halit Altuntas or S. R. P. Silva.

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Altuntas, H., Oke-Altuntas, F. & Silva, S.R.P. The Effect of Low-Temperature Annealing on the Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors. J. Electron. Mater. 53, 2104–2114 (2024). https://doi.org/10.1007/s11664-023-10912-x

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