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Influence of Barrier with Gate Sinking on the Performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications

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Abstract

In this work, the impact of barrier thickness (Tb) on the behavior of InGaAs/InAs/InGaAs composite channel Dual material Double gate (DMDG) high electron mobility transistor (HEMT) devices for high-Frequency applications is explored in detail. The gate length (Lg) of the device is optimized to 50 nm and the device characteristics are explored in detail by varying the barrier thickness (Tb). Dual material gate (DMG) technology at both top and bottom gate of the device, shows a significant increase in drain current, transconductance and higher ION with suppressed short channel effects (SCE). InAs based composite channel DMDG-HEMT devices exhibit a high drain current of Ids = 4.2 × 10−3 A/mm, transconductance (gm) = 4.4 S/mm with reduced gate leakage for 50 nm gate length and barrier thickness of 4 nm for a drain to source voltage (Vds) = 0.5 V. Recessed gate with gate sinking technology stimulates the RF performance metrics with transition frequency fT = 864 GHz and maximum frequency of oscillation fmax = 960 GHz increasing the viability of the device making it suitable for terahertz applications.

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Funding

We did not receive support from any organization for the submitted work and we certify that they have no affiliations with or involvement in any organization or entity with any financial interest or non-financial interest in the subject matter or materials discussed in this manuscript.

Author information

Authors and Affiliations

  1. Department of ECE, Arunai Engineering College, Thiruvannaamalai, Tamil Nadu, India

    G. Sujatha

  2. Department of EECE, GITAM, Bengaluru, India

    N. Mohankumar & M. Karthigai Pandian

  3. Department of ECE, VSB Engineering College, Karudayampalayam, Tamilnadu, India

    R. Poornachandran

  4. Department of ECE, Bannari Amman Institute of Technology, Sathyamangalam, Tamil Nadu, India

    R. Saravanakumar

Authors
  1. G. Sujatha
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  2. N. Mohankumar
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  3. R. Poornachandran
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  4. R. Saravanakumar
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  5. M. Karthigai Pandian
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Contributions

1st author – G.Sujatha: Mathematical modeling and simulation work, Literature review.

2nd author – R.Poornachandran: Study conception and design, Literature review.

3rd author – N.Mohankumar: Supervision, Formal analysis and investigation.

4th author – R.Saravanakumar: Literature review, Original draft preparation.

5th author – M.Karthigai Pandian: Checked the results and validation, Final draft validation.

Corresponding author

Correspondence to G. Sujatha.

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We declare that the manuscript entitled “Influence of barrier with gate sinking on the performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications” is original, has not been full or partly published before, and is not currently being considered for publication elsewhere.

We confirm that the manuscript has been read and approved by all named authors and that there are no other persons who satisfied the criteria for authorship but are not listed. We further confirm that the order of authors listed in the manuscript has been approved by the undersigned.

We understand that the Corresponding Author is the sole contact for the editorial process. The corresponding author “Ms.G.Sujatha” is responsible for communicating with the other authors about process, submissions of revisions, and final approval of proofs.”

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The authors have NO affiliations with or involvement in any organization or entity with any financial interest (such as honoraria; educational grants; participation in speakers’ bureaus; membership, employment, consultancies, stock ownership, or other equity interest; and expert testimony or patent-licensing arrangements), or non-financial interest (such as personal or professional relationships, affiliations, knowledge or beliefs) in the subject matter or materials discussed in this manuscript.

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Sujatha, G., Mohankumar, N., Poornachandran, R. et al. Influence of Barrier with Gate Sinking on the Performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications. Silicon 14, 10509–10520 (2022). https://doi.org/10.1007/s12633-022-01785-6

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