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Analytical Modeling and Simulation of Gate-All-Around Junctionless Mosfet for Biosensing Applications

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Abstract

A new analytical model for a Junctionless Field Effect Transistor that can be used in biosensor applications is proposed in this research work. The Semiconductor device analyzed here employs a Gate-All-Around structure made of two dissimilar materials. The main objective of the surrounding gate is to reduce the Short Channel Effects owing to its scalability. This model introduces a novel dual material structure embedded with a nanocavity to make it suitable for biosensing applications. 2-D Poisson’s equation is solved using the Finite Differentiation Method to obtain the surface potential, which in turn is employed to determine the electric field and threshold voltage of the proposed structure. Finally, the biosensor sensitivity of the device is analyzed and the obtained results are verified using 2D TCAD simulations.

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Data is available as Tables and Figures in appropriate places in the manuscript

References

  1. Jazaeri F, Barbut L, Koukab A, Sallese J-M (2013) Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime. Solid State Electron 82:103–110

    Article  CAS  Google Scholar 

  2. Karthigai Pandian M, Balamurugan NB (2014) Analytical threshold voltage modeling of surrounding gate silicon nanowire transistors with different geometries. J Electr Eng Technol:742–751

  3. Guangxi et al (2014) Analytical models for electric potential, threshold voltage, and subthreshold swing of junctionless surrounding-gate transistors. IEEE Trans Electr Devices 61(3):688–695

    Article  Google Scholar 

  4. Venkatesh M, Suguna M, Balamurugan NB (2020) Influence of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET for improved Analog/RF Performance. Silicon-Springer, http://link.springer.com/article/10.1007/s12633-020-00385-6

  5. Venkatesh M, Balamurugan NB (2020) Influence of Threshold Voltage Performance analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications. Silicon-Springer, http://link.springer.com/article/10.1007/s12633-020-00422-4

  6. Venkatesh M, Lakshmi Priya G, Balamurugan NB (2020) Investigation of Ambipolar Conduction and RF Stability Performance in Novel Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate TFET. Silicon-Springer, https://doi.org/10.1007/s12633-020-00856-w

  7. Kumar MJ, Orouji AA, Dhakad H (2006) New dual-material SG nanoscale MOSFET: analytical threshold-voltage model. IEEE Trans Electron Devices 53(4):920–922

    Article  CAS  Google Scholar 

  8. Li C et al (2013) Quasi-two- dimensional threshold voltage model for Junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate. IOP Science, pp 1–6

  9. D’agostino F, Quercia D (2000) Short Channel effects in MOSFETS, Project

  10. Pal A, Sarkar A (2014) Analytical study of dual material surrounding gate MOSFET to suppress short-channel effects (SCEs). International Journal of Engineering Science and Technology, 2 17(4):205–212

  11. Subrahmanyam B, Jagadesh Kumar M (2008) Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effects. Elsevier pp 671–676

  12. Pal A, Sarkar A (2014) Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs). Elsevier, pp 205–212

  13. Sowmya K, Balamurugan NB, Parvathy V (2019) A 2-D Modeling od Fe doped dual material gate AlGaN/AIN/GaN high electron mobility transistors for high frequency applications. Int J Electron Commun 103:46–56

    Article  Google Scholar 

  14. Sowmya K, Balamurugan NB (2019) Modeling and simulation of dual material-gate AlGaN/GaN high-electron-mobility transistor using finite difference method. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 32(3)

  15. Preethi S, Balamurugan NB (2020) Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method, pp 1–11, Silicon - Springer

  16. Bhalla N, Jolly P, Formisano N, Estrela P (2016) Introduction to biosensors. Essays Biochem:1–8

  17. Ajay, Narang R, Saxena M, Gupta M (2015) Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors. Superlattices Microstruct 8:557–572

    Article  Google Scholar 

  18. Singh S, Raj B, Vishvakarma SK (2018) Analytical modeling of split gate junctionless transistor for a biosensor application. Sens Biosens Res 18:31–36

    Google Scholar 

  19. Parihar MS, Kranti A (2015) Enhanced sensitivity of double gate junctionless transistor architecture for biosensing applications. J Nanotechnol 26(14)

  20. Pratap Y, Kumar M, Kabra S, Subhasis H, Gupta RS, Gupta M (2018) Analytical modeling of gate all around junctionless transistor based biosensors for detection of neutral biomolecule species. J Comput Electron 17(1):288–296

    Article  CAS  Google Scholar 

  21. Buvaneswari B, Balamurugan NB (2019) 2D Analytical modeling and simulation of dual material DG MOSFET for biosensing application. Int J Electron Commun 99:193–200

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of ECE, Sri Krishna College of Technology, Coimbatore, Tamil Nadu, India

    S. Preethi

  2. School of Electronics and Communication Engineering, REVA University, Bengaluru, Karnataka, India

    M. Venkatesh

  3. Department of Electrical, Electronics and Communication Engineering, GITAM Deemed to be University, Bengaluru, Karnataka, India

    M. Karthigai Pandian

  4. School of Electronics Engineering, VIT University, Chennai, Tamil Nadu, India

    G. Lakshmi Priya

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  1. S. Preethi
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  2. M. Venkatesh
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  3. M. Karthigai Pandian
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  4. G. Lakshmi Priya
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Correspondence to S. Preethi.

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Preethi, S., Venkatesh, M., Karthigai Pandian, M. et al. Analytical Modeling and Simulation of Gate-All-Around Junctionless Mosfet for Biosensing Applications. Silicon 13, 3755–3764 (2021). https://doi.org/10.1007/s12633-021-01301-2

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  • DOI: https://doi.org/10.1007/s12633-021-01301-2

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