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Mobile FD-CR with High-Speed VTFET CMOS SOI Switch Under Channel Estimation Error

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Abstract

In this paper, Silicon-on-Insulator vertical TFET based CMOS high-speed switch is implemented on Full-duplex Cognitive Radio (FD-CR), and the impact of cognitive radio (CR) node mobility on the performance of a full-duplex (FD) system is investigated under imperfect channel estimation. In this regard, a vertical SOI CMOS structure is designed, and its performance parameters are investigated, and then it is employed in the FD system. The mobile CRs are considered, and the channel between primary transmitter (PT) and CRs is time selective due to node mobility. Jake’s model is used to model CR node mobility. Here, the energy detection (ED) technique is used for spectrum sensing. The expressions for the false alarm and detection probabilities have been obtained, considering the sensing and residual self-interference (RSI) channel as Nakagami-m distributed. We got the receiver operating characteristic (ROC) curve, an area under the ROC (AUC) curve, and the total error rate (TER) under perfect CSI, imperfect CSI, and node mobility at the receiver. Monte Carlo simulation is given to validate all of the analytical findings.

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Authors and Affiliations

  1. Department of Electronics Engineering, Institute of Engineering and Technology, Lucknow, Uttar Pradesh, India

    Ashish K. Rao, Neelam Srivastava & Rajiv K. Singh

  2. Department of Electronics and Communication Engineering, Aditya Engineering College, Surampalem, Andhra Pradesh, India

    Santoshkumar Sabat

Authors
  1. Ashish K. Rao
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  2. Santoshkumar Sabat
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  3. Neelam Srivastava
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  4. Rajiv K. Singh
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All authors have equally participated in preparing the manuscript during the implementation of ideas, findings, results, and manuscript writing.

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Correspondence to Santoshkumar Sabat.

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Rao, A.K., Sabat, S., Srivastava, N. et al. Mobile FD-CR with High-Speed VTFET CMOS SOI Switch Under Channel Estimation Error. Silicon 14, 9467–9478 (2022). https://doi.org/10.1007/s12633-022-01688-6

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  • DOI: https://doi.org/10.1007/s12633-022-01688-6

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