Abstract
In this manuscript, 60 nm CMOS is designed using Vertical TFETs structures and its ID-VGS is investigated. Then, the designed structure is utilized to implement the single-channel in-band full-duplex (SC-IBFD) radio receiver. The full-duplex cognitive radio (FD-CR) device performs the sensing and transmission in a single channel at the same time and frequency. Here, the FD-CRs are considered to be stationary, and the channel between the primary transmitter (PT) and the cognitive radios (CRs) is Nakagami-m distributed fading. The influence of channel state information (CSI) estimation error on the performance of SC-IBFD radio receiver is investigated. The energy detection (ED) approach is utilised for spectrum sensing. The expressions for the false alarm and detection probability were calculated under the Nakagami-m distribution for the sensing and residual self-interference (RSI) channels. Finally, under perfect CSI and imperfect CSI, the receiver operating characteristic (ROC) curves are obtained. The total error rate (TER) and the area under the ROC (AUC) curve are also obtained at the receiver. All of the analytical findings are validated using Monte Carlo simulation.
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Rao, A.K., Singh, S., Srivastava, N. et al. Impact of CSI on Single channel In-band Full-duplex Radio implemented with 60 nm Vertical TFET-based CMOS structure. Silicon 14, 9319–9329 (2022). https://doi.org/10.1007/s12633-021-01559-6
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DOI: https://doi.org/10.1007/s12633-021-01559-6