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Feasibility Study of Tuning the Threshold Voltage of Nanoscale Fin-shaped Field Effect Transistor (FinFET) via Metal Gate Workfunction Engineering

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Abstract

In this paper, we comprehensively assess the unique features, feasibility and limitations of dual material gate fin field effect transistor for tuning the threshold voltage in nanoscale regime. The device performance is considerably improved via employing a gate configuration having an adjustable workfunction values, enabling operation of the device at a selected threshold voltage. The proposed structure contains a high workfunction gate material at the source side as well as a low workfunction gate material at the drain side, which screens the drain lateral electric field. The simulation results specify the superiority of dual material structure in terms of adjusting the threshold voltage, suppression of short channel effects due to the creation of a step in the surface channel potential profile and improvement of on/off current ratio. Impact of critical design parameters on the feasibility of dual material structure are thoroughly investigated and statistical analysis has been carried out to assess the sensitivity of device main electrical measures with respect to the variation of design parameters. The fin width is a fundamental design parameter which degrades the feasibility of dual material structure in nanoscale regime. The results demonstrate that for long channel devices, dual material structure exhibited modified electrical performance. However, it is seen that for extremely scaled devices with gate length below 10nm, single material gate material with high workfunction is the appropriate approach for efficient device performance.

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In case of no conflict of interest, any materials and data that are reasonably requested by others are available to members of the scientific community for noncommercial purposes.

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In case of no conflict of interest, the code that are reasonably requested by others are available to members of the scientific community for noncommercial purposes.

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Authors and Affiliations

  1. Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran

    Farzad Mehrdad & Zahra Ahangari

Authors
  1. Farzad Mehrdad
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  2. Zahra Ahangari
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All authors discussed, simulated the results and contributed to the final manuscript.

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Correspondence to Zahra Ahangari.

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This research is a simulation study and there is no ethics to declare.

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This research is a simulation study and there is no “Consent to participate” to declare- Not applicable.

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I, Zahra Ahangari and on behalf of the other author Farzad Mehrdad, give my consent for the publication of identifiable details, which can include figures and details within the text and the whole manuscript to be published in the journal of Silicon.

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Mehrdad, F., Ahangari, Z. Feasibility Study of Tuning the Threshold Voltage of Nanoscale Fin-shaped Field Effect Transistor (FinFET) via Metal Gate Workfunction Engineering. Silicon 14, 7567–7576 (2022). https://doi.org/10.1007/s12633-021-01494-6

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  • DOI: https://doi.org/10.1007/s12633-021-01494-6

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