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Analysis on DC and RF/Analog Performance in Multifin-FinFET for Wide Variation in Work Function of Metal Gate

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Abstract

It is well established that increase in number of fins improves the RF/Analog performances of FinFET. In this paper, the effect of work function (ɸM) of metal gate on transfer characteristics, on current (Ion), off current (Ioff), threshold voltage (VT), and subthreshold swing (SS) are reported in Multifin-FinFET. It is seen that both the current ratio (Ion/Ioff) and SS improves as ɸM changes from 4.4 to 4.7 eV. Impact of ɸM on RF/Analog parameters like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), gate capacitance (Cgg), and cut-off frequency (ft) are investigated for Multifin-FinFET. Analysis reveals that intrinsic gain and cut off frequency improves with increase in ɸM of metal gate.

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Acknowledgments

The authors acknowledge the funding by Science & Engineering Research Board (SERB), Govt. of India, (sanction order no SRG/2019/000628).

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  1. School of Electronics Engineering, Vellore Institute of Technology Andhra Pradesh University, Amravati, AP, 522237, India

    Yash Hirpara & Rajesh Saha

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  1. Yash Hirpara
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  2. Rajesh Saha
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Correspondence to Rajesh Saha.

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Hirpara, Y., Saha, R. Analysis on DC and RF/Analog Performance in Multifin-FinFET for Wide Variation in Work Function of Metal Gate. Silicon 13, 73–77 (2021). https://doi.org/10.1007/s12633-020-00408-2

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  • DOI: https://doi.org/10.1007/s12633-020-00408-2

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