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Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length

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Abstract

In this paper, a 3D process of a nanometric n-channel fin field-effect transistor (FinFET) is discussed and the impact of variations of the fin parameter, the gate work function, and doping concentration on device characteristics are studied using the ATLAS Silvaco device simulator. Simulation results for various gate lengths are reported and analyzed. As the quantum effects are pronounced in nanoscale devices, we have included these effects in our study and simulation. We have then compared the achieved results to classical simulations to assess their performance limits. Finally, a comparison of our results with recently published data is presented to confirm our study.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of Mostaganem, 27000, Mostaganem, Algeria

    N. Boukortt & B. Hadri

  2. Dipartimento Di Scienze Matematiche E Informatiche, Scienze Fisiche E Scienze Della Terra, University of Messina, 98166, Messina, Italy

    N. Boukortt & S. Patanè

  3. Department of Engineering, University of Messina, 98166, Messina, Italy

    A. Caddemi & G. Crupi

Authors
  1. N. Boukortt
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  2. B. Hadri
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  3. S. Patanè
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  4. A. Caddemi
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  5. G. Crupi
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Corresponding author

Correspondence to N. Boukortt.

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Boukortt, N., Hadri, B., Patanè, S. et al. Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length. Silicon 9, 885–893 (2017). https://doi.org/10.1007/s12633-016-9528-3

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  • DOI: https://doi.org/10.1007/s12633-016-9528-3

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