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Design and Investigation of F-shaped Tunnel FET with Enhanced Analog/RF Parameters

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Abstract

In this manuscript, a novel physically doped single gate F-shaped tunnel FET is simulated and optimized. The designed configuration is well optimized and analyzed for different source thickness, source length, drain length with different lateral tunneling lengths between the source edge and gate dielectric. Also, we optimized some stand-points like threshold voltage, ION to IOFF current ratio, ambipolar conduction range, sub-threshold swing and various capacitance to rectify the analog/RF performance of single gate F-shaped TFET. Regarding this, we concurrently optimize the lateral tunneling length between source and gate with optimization of source thickness. The variation in lateral tunneling length, the potential and strength of electric field at fixed Vgs voltage is varied which leads to effective change in the ON-current, average sub-threshold swing, and turn ON-voltage. Another side, as well as the source thickness vary, the electric field variation takes place near the edge of source, which leads to variation in the ON-current and ON-voltage. The performance parameters of single gate F-TFET is compared with single gate L-TFET, which is the incentive of this submitted work. The optimized single gate F-TFET have 0.30 V turn ON-voltage with 7.4 mV/decade average sub-threshold swing and high Ion/Ioff ratio approx 1013. Besides, a significant reduction in parasitic capacitance is beneficial to enhanced RF performance with better controllability on channel.

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The data and material concerned to the manuscript may be made available on request.

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Acknowledgements

The authors would like to thank Dr. Dip Prakash Samajdar from Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, Madhya Pradesh, India for providing valuable suggestions and support to carry out this research work.

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Authors and Affiliations

  1. Electronics and Communication Engineering Department, NIT Hamirpur, Himachal, Pradesh, 177005, India

    Prabhat Singh & Dharmendra Singh Yadav

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  1. Prabhat Singh
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  2. Dharmendra Singh Yadav
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Contributions

– Prabhat Singh: Conceptualization, data curation, formal analysis, methodology, investigation, writing – original draft.

– Dharmendra Singh Yadav: Supervision, validation, visualization, writing – review & editing

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Correspondence to Prabhat Singh.

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Singh, P., Yadav, D.S. Design and Investigation of F-shaped Tunnel FET with Enhanced Analog/RF Parameters. Silicon 14, 6245–6260 (2022). https://doi.org/10.1007/s12633-021-01420-w

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