Abstract
The DC and Analog/RF performance of Gate Extended-U-shaped channel tunneling field-effect transistors (GE-UTFET) was examined in this study. The performance of the device was investigated through technology computer added design in terms of transconductance (gm), intrinsic capacitances (Cgg, Cgs, and Cgd), cut-off frequency (fT), and gain-bandwidth product (fA). Simulation results show that GE-UTFET has an improved DC characteristic than UTFET. Also, the better RF performance of GE-UTFET than UTFET makes it more suitable for high-frequency application which is attributed to the reduced miller capacitance (Cgd) and enhanced gm.
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Debnath, R.G., Baruah, K. & Baishya, S. DC and analog/RF performance analysis of gate extended U-shaped channel tunnel field effect transistor. Microsyst Technol 26, 2793–2799 (2020). https://doi.org/10.1007/s00542-020-04846-1
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DOI: https://doi.org/10.1007/s00542-020-04846-1