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An improved tunnel field-effect transistor with an L-shaped gate and channel

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Abstract

An improved tunnel field-effect transistor with an L-shaped gate and channel (LLTFET) is proposed herein. The new structure shows an increased ON-current without any change in the overall area in comparison with state-of-the-art structures. The L-shaped gate extends into the substrate and overlaps with part of the source. An N+ pocket located just below the gate facilities tunneling in both the horizontal and vertical directions, which results in the increased ON-current. Three different models are proposed herein to increase the ON-current with the added advantage of simplified fabrication steps. For one of the proposed models, the ON-current is improved by 63% while the OFF-current is reduced to 12.5% compared with an L-shaped gate TFET (LGTFET) described in literature. An optimum model is also proposed, achieving a subthreshold swing of 21.2 mV/decade at 0.05\(V_{\mathrm{gs}}\). The simulations are performed using Silvaco ATLAS with the nonlocal band to band tunneling (BTBT) model.

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References

  1. Choi, W.Y., Park, B.G., Lee, J.D., Liu, T.J.K.: Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett. 28(8), 743–745 (2007). https://doi.org/10.1109/LED.2007.901273

    Article  Google Scholar 

  2. Seabaugh, A.C., Zhang, Q.: Low-voltage tunnel transistors for beyond CMOS logic. Proc. IEEE 98(12), 2095–2110 (2010). https://doi.org/10.1109/JPROC.2010.2070470

    Article  Google Scholar 

  3. Kim, S.W., Kim, J.H., Liu, T.J.K., Choi, W.Y., Park, B.G.: Demonstration of L-shaped tunnel field-effect transistors. IEEE Trans. Electron Device 63(4), 1774–1778 (2016). https://doi.org/10.1109/TED.2015.2472496

    Article  Google Scholar 

  4. Wang, W., Wang, P.F., Zhang, C.M., Lin, X., Liu, X.Y., Sun, Q.Q., Zhou, P., Zhang, D.W.: Design of U-shape channel tunnel FETs with SiGe source regions. IEEE Trans. Electron Device 61(1), 193–197 (2014). https://doi.org/10.1109/TED.2013.2289075

    Article  Google Scholar 

  5. Yang, Z.: Tunnel field-effect transistor with an L-shaped gate. IEEE Electron Device Lett. 37(7), 839–842 (2016). https://doi.org/10.1109/LED.2016.2574821

    Article  Google Scholar 

  6. Abdi, D.B., Kumar, M.J.: In-built N+ pocket p-n-p-n tunnel field-effect transistor. IEEE Electron Device Lett. 35(12), 1170–1172 (2014). https://doi.org/10.1109/LED.2014.2362926

    Article  Google Scholar 

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Authors and Affiliations

  1. Indian Institute of Science (IISc), Bangalore, India

    Nithin Abraham

  2. Division of Electronics, Cochin University of Science and Technology, Kochi, India

    Rekha K. James

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  1. Nithin Abraham
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  2. Rekha K. James
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Correspondence to Nithin Abraham.

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Abraham, N., James, R.K. An improved tunnel field-effect transistor with an L-shaped gate and channel. J Comput Electron 19, 304–309 (2020). https://doi.org/10.1007/s10825-020-01450-4

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  • DOI: https://doi.org/10.1007/s10825-020-01450-4

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