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Analysis of a Novel Nanoscale Vacuum Channel TF-FinFET

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Abstract

Concerned work is solely dedicated to the optimized characteristics of Nanoscale vacuum channel TF (Truncated fin)-FinFET at gate length of 7 nm. NVCTF-FinFET has its own benefit, due to high immune to noise and temperature as compared to TF-FinFET. The working of device stood perfectly well in case of NVCTF-FinFET. When tested, we end up with 3 times less current variation w.r.t temperature, 3 times more efficiency, 104 times more amplifying power analysed at corresponding peak values. These results evident the performance enhancement of NVCTF-FinFET, if seen from analog point of view. When studied from the perspective of linearity for RFIC designs, we end up with enhancement in some figure of merits such as 3.5 times in 1-dB compression point, 4 times more IP3, 102 times in HD3 and around 105 times in IMD3 at corresponding peak values. As NVCTF-FinFET provided descent switching ratio and Vth at input voltage (<2 V), which could lead these transistors beyond Moore’s law. These simulation difference ultimately made NVCTF-FinFET, a significant candidate to high speed and noise reduction System on chip (SOCs) operations in outer space.

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Acknowledgments

All the authors would like to show the extreme regards to Microelectronics Research Laboratory, Department of Applied Physics, Delhi Technological University, for supporting this research work.

Code Availability

The relevant code with the manuscript is also available and would be available, if will be asked to do so later.

Funding

The authors are grateful to Microelectronics Research Laboratory, Department of Applied Physics, Delhi Technological University for supporting this research work. However, there has been ‘no funding’ grants from the organization.

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Authors and Affiliations

  1. Department of Applied Physics, Delhi Technological University, New Delhi, India

    Mridul Prakash Kashyap, Sanmveg Saini & Rishu Chaujar

Authors
  1. Mridul Prakash Kashyap
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  2. Sanmveg Saini
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  3. Rishu Chaujar
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by Mridul Prakash Kashyap, Sanmveg Saini and Rishu Chaujar. The first draft of the manuscript was written by Mridul Prakash Kashyap and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Rishu Chaujar.

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Kashyap, M.P., Saini, S. & Chaujar, R. Analysis of a Novel Nanoscale Vacuum Channel TF-FinFET. Silicon 13, 3257–3269 (2021). https://doi.org/10.1007/s12633-021-01103-6

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  • DOI: https://doi.org/10.1007/s12633-021-01103-6

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