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Design of Dopingless GaN Nanowire FET with Low ‘Q’ for High Switching and RF Applications

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Abstract

The unique properties like wide band gap and high electron mobility makes GaN an interesting material to be used in building devices at the nanoscale in recent times. This paper first time proposed a charge plasma (CP) based dopingless gate all around (GAA) GaN Nanowire FET (NWFET) (CP-GaN). The advantages of CP device over junctionless (JL) in NWFET structure along with properties of GaN material, results in a highly efficient structure of CP-GaN. The CP-GaN is compared with JL-GaN and silicon counterparts of CP & JL. Results reveal that CP-GaN is showing outstanding performance as Ion of 3.95 × 10−5 A, Ioff of 5.36 × 10−13 A and Ion/Ioff of 7.37 × 107. The proposed device CP-GaN shows better performance than CP-Si based device. When compared with JL-GaN, CP-GaN shows 55% less DIBL. The figure of merit Q = gm/SS of 0.85 μS/μm-dec/mV, is highest for our proposed CP-GaN. This makes CP-GaN an attractive design to be explored for high switching & low voltage applications with reduced SCEs and lower thermal budget. The other design parameters viz. gate length, gate dielectric, gate and source/drain work functions, nanowire radius and interface trap charges effect are also investigated for further optimization of the proposed design.

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Acknowledgements

The authors want to thank VLSI lab of NIT Jalandhar for providing the necessary set up to carry out this research.

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Authors and Affiliations

  1. VLSI design Lab., Department of Electronics and communications, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, 144011, India

    Sarabdeep Singh & Ashish Raman

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  1. Sarabdeep Singh
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  2. Ashish Raman
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Contributions

All authors contributed to the study conception and design. Literature review, material preparation, simulation of sensor, simulation of testing part and analysis were performed by [Sarabdeep Singh]. The first draft of the manuscript was written by [Dr. Ashish Raman] and other author commented on previous versions of the manuscript. Both authors read and approved the final manuscript.

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Correspondence to Sarabdeep Singh.

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Singh, S., Raman, A. Design of Dopingless GaN Nanowire FET with Low ‘Q’ for High Switching and RF Applications. Silicon 14, 1297–1307 (2022). https://doi.org/10.1007/s12633-020-00912-5

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  • DOI: https://doi.org/10.1007/s12633-020-00912-5

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