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Detailed Consideration of Electrical and Dielectric Properties of Au/Ni/n-Si MS Structure in a Wide Frequency Range

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Abstract

In the presented study, the electrical and dielectric properties of Au/Ni/n–Si MS structure are examined in detail by performing frequency–dependent admittance spectroscopy technique over a wide frequency range (3 kHz–1 MHz). Dielectric constant, dielectric loss, dielectric loss tangent, real modulus, imaginary modulus, and electrical conductivity of the structures are calculated by evaluating the results obtained from admittance spectroscopy. The experimental data received in the wide frequency range is examined in three different frequency ranges as low (3–10 kHz), medium (20–100 kHz) and high (0.2–1 MHz) to a more detailed examination and a better understanding of electrical and dielectric properties. The dielectric loss tangent, real modulus and imaginary modulus values increase with increasing frequency, while dielectric constant and dielectric loss values decrease with increasing frequency. The electric modulus values increase with the increasing frequency is ascribed by the dipoles and the polarize electrons’ dielectric relaxation. In addition, despite the change of electrical conductivity values are constant in the low frequency and middle frequency regions, it decreases as the frequency increases in the high–frequency region. For all parameters, the frequency–dependent behavior of the structure is specifically studied at 2 V. It is concluded within the present study that Si–based MS structures created by integrating Au/Ni have the potential to be used especially in innovative and applicable electronic and optoelectronic devices such as rectifiers and switchers.

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References

  1. Tecimer H, Uslu H, Alahmed ZA, Yakuphanoğlu F, Altındal Ş (2014) On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs). Compos Part B Eng 57:25–30. https://doi.org/10.1016/j.compositesb.2013.09.040

    Article  CAS  Google Scholar 

  2. Sharma BL (1984) Fabrication and characterization of metal-semiconductor Schottky barrier junctions, In: Met. Schottky Barrier Junctions Their Appl., Springer, pp. 113–159

  3. Sze SM (1981) Physics of semiconductor devices2nd edn. Awiley Inter-science John Wiley and Sons, New York

    Google Scholar 

  4. Rhoderick EH, Williams RH (1988) Metal-semiconductor contacts. Clarendon, Oxford

    Google Scholar 

  5. Cheung SK, Cheung NW (1986) Extraction of Schottky diode parameters from forward current-voltage characteristics. Appl Phys Lett 49:85–87. https://doi.org/10.1063/1.97359

    Article  CAS  Google Scholar 

  6. Card HC, Rhoderick EH (1971) Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J Phys D Appl Phys 4:319. https://doi.org/10.1088/0022-3727/4/10/319

    Article  Google Scholar 

  7. Chattopadhyay P (1996) The effect of shunt resistance on the electrical characteristics of Schottky barrier diodes. J Phys D Appl Phys 29:823–829. https://doi.org/10.1088/0022-3727/29/3/047

    Article  CAS  Google Scholar 

  8. Bayraklı Sürücü Ö (2019) Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode. J Mater Sci Mater Electron 30:19270–19278. https://doi.org/10.1007/s10854-019-02286-w

    Article  CAS  Google Scholar 

  9. Sürücü ÖB, Güllü HH, Terlemezoglu M, Yildiz DE, Parlak M (2019) Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes. Phys B Condens Matter 570:246–253. https://doi.org/10.1016/j.physb.2019.06.024

    Article  CAS  Google Scholar 

  10. Çokduygulular E, Çetinkaya Ç, Yalçın Y, Kinaci B (2020) A comprehensive study on Cu-doped ZnO (CZO) interlayered MOS structure. J Mater Sci Mater Electron 31:13646–13656. https://doi.org/10.1007/s10854-020-03922-6

    Article  CAS  Google Scholar 

  11. Kınacı B, Özçelik S (2013) Analysis of the temperature dependence of the capacitance–voltage and conductance–voltage characteristics of Au/TiO2 (rutile)/n-Si structures. J Electron Mater 42:1108–1113. https://doi.org/10.1007/s11664-013-2524-0

    Article  CAS  Google Scholar 

  12. Lee J-L, Mun JK, Lee B-T (1997) Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs. J Appl Phys 82:5011–5016. https://doi.org/10.1063/1.366371

    Article  CAS  Google Scholar 

  13. Bayraklı Ö, Terlemezoglu M, Güllü HH, Parlak M (2017) Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure. J Alloys Compd 709:337–343. https://doi.org/10.1016/j.jallcom.2017.03.163

    Article  CAS  Google Scholar 

  14. Sun Y, Shen XM, Wang J, Zhao DG, Feng G, Fu Y, Zhang SM, Zhang ZH, Feng ZH, Bai YX, Yang H (2002) Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts. J Phys D Appl Phys 35:2648–2651. https://doi.org/10.1088/0022-3727/35/20/326

    Article  CAS  Google Scholar 

  15. Reddy VR, Reddy NR, Choi C-J (2006) The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN. Semicond Sci Technol 21:1753–1757. https://doi.org/10.1088/0268-1242/21/12/044

    Article  CAS  Google Scholar 

  16. Korkut H, Yıldırım N, Turut A (2009) Thermal annealing effects on I–V–T characteristics of sputtered Cr/n-GaAs diodes. Phys B Condens Matter 404:4039–4044. https://doi.org/10.1016/j.physb.2009.07.156

    Article  CAS  Google Scholar 

  17. Kınacı B, Çetinkaya Ç, Çokduygulular E, Efkere HI, Sonmez NA, Özçelik S (2020) Negative capacitance phenomena in Au/SrTiO3/p-Si heterojunction structure. J Mater Sci Mater Electron 31:8718–8726. https://doi.org/10.1007/s10854-020-03406-7

    Article  CAS  Google Scholar 

  18. Bülbül MM, Zeyrek S, Altindal Ş, Yüzer H (2006) On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes. Microelectron Eng 83:577–581. https://doi.org/10.1016/j.mee.2005.12.013

    Article  CAS  Google Scholar 

  19. Gullu HH, Sürücü ÖB, Terlemezoglu M, Yildiz DE, Parlak M (2019) Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure. J Mater Sci Mater Electron 30:15371–15378. https://doi.org/10.1007/s10854-019-01913-w

    Article  CAS  Google Scholar 

  20. Bengi A, Aydemir U, Altındal Ş, Özen Y, Özçelik S (2010) A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer. J Alloys Compd 505:628–633. https://doi.org/10.1016/j.jallcom.2010.06.095

    Article  CAS  Google Scholar 

  21. Uslu H, Altındal Ş, Aydemir U, Dökme İ, Afandiyeva İM (2010) The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes. J Alloys Compd 503:96–102. https://doi.org/10.1016/j.jallcom.2010.04.210

    Article  CAS  Google Scholar 

  22. Demircioglu Ö, Karataş Ş, Yıldırım N, Bakkaloglu ÖF, Türüt A (2011) Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si. J Alloys Compd 509:6433–6439. https://doi.org/10.1016/j.jallcom.2011.03.082

    Article  CAS  Google Scholar 

  23. Gullu HH, Yildiz DE, Bayrakli Sürücü Ö, Terlemezoglu M, M. (2019) Parlak, temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes. Bull Mater Sci 42:45. https://doi.org/10.1007/s12034-018-1713-0

    Article  CAS  Google Scholar 

  24. Demirezen S, Sönmez Z, Aydemir U, Altındal Ş (2012) Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature. Curr Appl Phys 12:266–272. https://doi.org/10.1016/j.cap.2011.06.016

    Article  Google Scholar 

  25. Kınacı B, Şebnem Çetin S, Bengi A, Özçelik S (2012) The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics. Mater Sci Semicond Process 15:531–535. https://doi.org/10.1016/j.mssp.2012.04.002

    Article  CAS  Google Scholar 

  26. Kınacı B, Akin N, Kars Durukan İ, Memmedli T, Özçelik S (2014) The study on characterizations of SrTiO3 thin films with different growth temperatures. Superlattice Microst 76:234–243. https://doi.org/10.1016/j.spmi.2014.10.018

    Article  CAS  Google Scholar 

  27. Bülbül MM (2007) Frequency and temperature dependent dielectric properties of Al/Si3N4/p-Si(100) MIS structure. Microelectron Eng 84:124–128. https://doi.org/10.1016/j.mee.2006.09.001

    Article  CAS  Google Scholar 

  28. Tataroğlu A, Altındal Ş, Bülbül MM (2005) Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure. Microelectron Eng 81:140–149. https://doi.org/10.1016/j.mee.2005.04.008

    Article  CAS  Google Scholar 

  29. Kar S, Varma S (1985) Determination of silicon-silicon dioxide interface state properties from admittance measurements under illumination. J Appl Phys 58:4256–4266. https://doi.org/10.1063/1.335561

    Article  CAS  Google Scholar 

  30. Şafak Asar Y, Asar T, Altındal Ş, Özçelik S (2015) Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures. Philos Mag 95:2885–2898. https://doi.org/10.1080/14786435.2015.1081301

    Article  CAS  Google Scholar 

  31. Bilkan Ç, Altındal Ş, Azizian-Kalandaragh Y (2017) Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co3O4-PVA interlayer structures. Phys B Condens Matter 515:28–33. https://doi.org/10.1016/j.physb.2017.04.002

    Article  CAS  Google Scholar 

  32. Nikravan A, Badali Y, Altındal Ş, Uslu İ, Orak İ (2017) On the frequency and voltage-dependent profiles of the surface states and series resistance of Au/ZnO/n-Si structures in a wide range of frequency and voltage. J Electron Mater 46:5728–5736. https://doi.org/10.1007/s11664-017-5613-7

    Article  CAS  Google Scholar 

  33. Chand S, Kumar J (1996) Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures. Appl Phys A Mater Sci Process 63:171–178. https://doi.org/10.1007/BF01567646

    Article  Google Scholar 

  34. Alptekin S, Tataroğlu A, Altındal Ş (2019) Dielectric, modulus and conductivity studies of au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature. J Mater Sci Mater Electron 30:6853–6859. https://doi.org/10.1007/s10854-019-00998-7

    Article  CAS  Google Scholar 

  35. Karaoğlan N, Tecimer HU, Altındal Ş, Bindal C (2019) Dielectric characterization of BSA doped-PANI interlayered metal–semiconductor structures. J Mater Sci Mater Electron 30:14224–14232. https://doi.org/10.1007/s10854-019-01791-2

    Article  CAS  Google Scholar 

  36. Maril E, Tan SO, Altindal S, Uslu I (2018) Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer. IEEE Trans Electron Devices 65:3901–3908. https://doi.org/10.1109/TED.2018.2859907

    Article  CAS  Google Scholar 

  37. Tecimer H, Tunç T, Altındal Ş (2018) Investigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)–zinc (Zn) doped organic interface layer. J Mater Sci Mater Electron 29:3790–3799. https://doi.org/10.1007/s10854-017-8314-3

    Article  CAS  Google Scholar 

  38. Badali Y, Altındal Ş, Uslu İ (2018) Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures. Prog Nat Sci Mater Int 28:325–331. https://doi.org/10.1016/j.pnsc.2018.05.003

    Article  CAS  Google Scholar 

  39. Buyukbas-Ulusan A, Taşçıoğlu İ, Tataroğlu A, Yakuphanoğlu F, Altındal S (2019) A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures. J Mater Sci Mater Electron 30:12122–12129. https://doi.org/10.1007/s10854-019-01570-z

    Article  CAS  Google Scholar 

  40. Demirezen S, Tanrıkulu EE, Altındal Ş (2019) The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors. Indian J Phys 93:739–747. https://doi.org/10.1007/s12648-018-1355-5

    Article  CAS  Google Scholar 

  41. Oruç Ç, Altındal A (2017) Structural and dielectric properties of CuO nanoparticles. Ceram Int 43:10708–10714. https://doi.org/10.1016/j.ceramint.2017.05.006

    Article  CAS  Google Scholar 

  42. Sevgili Ö, Taşçıoğlu İ, Boughdachi S, Azizian-Kalandaragh Y, Altındal Ş (2019) Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method. Phys B Condens Matter 566:125–135. https://doi.org/10.1016/j.physb.2019.04.029

    Article  CAS  Google Scholar 

  43. Taşçıoğlu İ, Tan SO, Altındal Ş (2019) Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure. J Mater Sci Mater Electron 30:11536–11541. https://doi.org/10.1007/s10854-019-01509-4

    Article  CAS  Google Scholar 

  44. Tecimer H (2018) On the frequency–voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures. J Mater Sci Mater Electron 29:20141–20145. https://doi.org/10.1007/s10854-018-0146-2

    Article  CAS  Google Scholar 

  45. Tan SO (2019) Identification of the frequency- and voltage-dependent dielectric characterization of metal-Zn/PVA-semiconductor structures. IEEE Trans Nanotechnol 18:432–436. https://doi.org/10.1109/TNANO.2019.2912026

    Article  CAS  Google Scholar 

  46. Gullu HH, Yildiz DE, Surucu O, Parlak M (2020) Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode. J Mater Sci Mater Electron 31:9394–9407. https://doi.org/10.1007/s10854-020-03479-4

    Article  CAS  Google Scholar 

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Acknowledgments

This work was supported by the Ministry of Development of TR under Project No: 2019 K12–92587.

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  1. Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey

    Yunus Özen

  2. Photonics Research Center, Gazi University, 06500, Ankara, Turkey

    Yunus Özen

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Özen, Y. Detailed Consideration of Electrical and Dielectric Properties of Au/Ni/n-Si MS Structure in a Wide Frequency Range. Silicon 13, 3011–3016 (2021). https://doi.org/10.1007/s12633-020-00656-2

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