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On the frequency–voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures

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Abstract

The frequency effect on the dielectric features of Zn doped polymer interlayered metal–semiconductor (MS) structure has been investigated by admittance measuring methods. As a function of frequency and voltage, the parameters such as dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tanδ), and ac electrical conductivity (σac) have been calculated. The values of ε′, ε″ and tanδ were decreased with frequency increment for each applied bias. The decrement at ε′ and ε″ by frequency increase indicated that the interfacial dipoles have not enough time to orient themselves in the alternate field direction. While the M′ value increase with frequency and reach a maximum, M″ displays a peak where its position shifts to higher frequency with increasing applied bias. The ln(σac) vs ln(ω) plot of the structure at 6 V has two linear regions with different slopes. Such behavior of ln(σac) vs ln(ω) plot reveals that there are two distinct conduction mechanisms in the Al/(0.07Zn-doped PVA)/p-Si MPS type SBDs at room temperature.

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  1. Department of Mechatronics Engineering, Karabük University, 78050, Karabük, Turkey

    Hüseyin Tecimer

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Tecimer, H. On the frequency–voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures. J Mater Sci: Mater Electron 29, 20141–20145 (2018). https://doi.org/10.1007/s10854-018-0146-2

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  • DOI: https://doi.org/10.1007/s10854-018-0146-2

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