Abstract
The measured capacitance and conductance–voltage (C&G/ω–V) data between 1 and 200 kHz of Al/(BSA-doped-PANI)/p-InP structure were examined to uncover real and imaginary components of complex permittivity (ε* = ε′ − jε″), loss tangent (tanδ), complex electric modulus (M* = M′ + jM″), and electrical conductivity (σ). It was uncovered that dielectric constant (ε′), dielectric loss (ε″), tanδ, real and imaginary components (M′ and M″) show a big dispersive behavior at low frequencies due to the oriental and the interfacial polarizations, as well as the surface states (Nss) and the BSA doped-PANI interlayer. Such behavior in ε′, ε″, and tanδ, behavior with frequency was also explained by Maxwell–Wagner relaxation. The values of σ are almost constant at lower-intermediate frequencies, but they start increase at high frequencies which are corresponding to the dc and ac conductivity, respectively. The values of M′ and M″ are lower in the low frequency zone and they become increase with increasing frequency at accumulation region due to the short-range charge carriers mobility. Ultimately, dielectric parameters and electric modulus alteration with frequency is the consequence of surface states and relaxation phenomena.
Similar content being viewed by others
References
S.O. Tan, Comparison of graphene and zinc dopant materials for organic polymer interfacial layer between metal semiconductor structure. IEEE Trans. Electron Devices 64(12), 5121–5127 (2017)
Ş. Altındal, H. Uslu, The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures. J. Appl. Phys. 109(7), 074503 (2011)
S.A. Yerişkin, M. Balbaşı, I. Orak, The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. J. Mater. Sci. 28(18), 14040–14048 (2017)
H. Tecimer, S.O. Tan, Ş. Altındal, Frequency-dependent admittance analysis of the metal-semiconductor structure with an interlayer of Zn-doped organic polymer nanocomposites. IEEE Trans. Electron Devices 65(1), 231–236 (2017)
H. Tecimer, On the frequency–voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures. J. Mater. Sci. 29(23), 20141–20145 (2018)
G.E. Demir, İ. Yücedağ, Y. Azizian-Kalandaragh, Ş. Altındal, Temperature and interfacial layer effects on the electrical and dielectric properties of Al/(CdS-PVA)/p-Si (MPS) structures. J. Electron. Mater. 47(11), 6600–6606 (2018)
H.C. Card, E.H. Rhoderick, Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D 4(10), 1589 (1971)
C.C. Lin, Y.H. Wu, T.H. Hung, Y.T. Chang, Impact of interfacial layer position on resistive switching behaviors for ZrTiO x-based metal–insulator–metal devices. IEEE Trans. Nanotechnol. 13(4), 634–638 (2014)
S.O. Tan, H. Tecimer, O. Çiçek, Comparative investigation on the effects of organic and inorganic interlayers in Au/n-GaAs Schottky diodes. IEEE Trans. Electron Devices 64(3), 984–990 (2017)
N.G. McCrum, B.E. Read, G. Williams, Anelastic and dielectric effects in polymeric solids (Wiley, New York, 1967)
E. Mar et al., Evaluation of electric and dielectric properties of metal–semiconductor structures with 2% GC-doped-(Ca3Co4Ga0.001Ox) interlayer. IEEE Trans. Electron Devices 65(9), 3901–3908 (2018)
M.M. Hoque et al., The impedance spectroscopic study and dielectric relaxation in A (Ni1/3Ta2/3) O3 [A = Ba, Ca and Sr]. Phys. B 407(18), 3740–3748 (2012)
S. Yasufuku et al., Maxwell-wagner dielectric polarization in polypropylene film/aromatic dielectric fluid system for high voltage capacitor use. IEEE Trans. Electr. Insul. 6, 334–342 (1979)
J. Chen et al., Current–voltage–temperature and capacitance–voltage–temperature characteristics of TiW alloy/p-InP Schottky barrier diode. J. Alloys Compd. 649, 1220–1225 (2015)
B. Akkal et al., Illumination dependence of I-V and C–V characterization of Au/InSb/InP (1 0 0) Schottky structure. Appl. Surf. Sci. 253(3), 1065–1070 (2006)
V. Janardhanam et al., Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers. J. Alloys Compd. 504(1), 146–150 (2010)
P.S. Reddy, V. Janardhanam, I. Jyothi, S.H. Yuk, V.R. Reddy, J.C. Jeong, S.N. Lee, C.J. Choi, Modification of Schottky barrier properties of Ti/p-type InP Schottky diode by polyaniline (PANI) organic interlayer. J. Semicond. Technol. Sci. 16(5), 664–674 (2016)
O. Çiçek, S.O. Tan, H. Tecimer, Ş. Altındal, Role of graphene-doped organic/polymer nanocomposites on the electronic properties of Schottky junction structures for photocell applications. J. Electron. Mater. 47(12), 7134–7142 (2018)
H.U. Tecimer, M.A. Alper, H. Tecimer, S.O. Tan, Ş. Altındal, Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes. Polym. Bull. 75(9), 4257–4271 (2018)
Y.S. Altındal, M. Balbaşı, A. Tataroğlu, Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped-PVA/n-Si (MPS) structures. J. Appl. Polym. Sci. (2016). https://doi.org/10.1002/app.43827
J. Jang, J. Ha, J. Cho, Fabrication of water-dispersible polyaniline-poly (4-styrenesulfonate) nanoparticles for inkjet-printed chemical-sensor applications. Adv. Mater. 19(13), 1772–1775 (2007)
S. Ashokan, V. Ponnuswamy, P. Jayamurugan, Comparative study of pure polyaniline with various oxidants by a template free method. Mater. Sci. Semicond. Process. 30, 494–501 (2015)
J. Stejskal et al., The effect of polymerization temperature on molecular weight, crystallinity, and electrical conductivity of polyaniline. Synth. Met. 96(1), 55–61 (1998)
P.J. Saikia, P.C. Sarmah, Investigation of polyaniline thin film and schottky junction with aluminium for electrical and optical characterization. Mater. Sci. Appl. 2(08), 1022 (2011)
S. Ashokan et al., Influence of the counter ion on the properties of organic and inorganic acid doped polyaniline and their Schottky diodes. Superlattices Microstruct. 85, 282–293 (2015)
Z. Zhang, Z. Wei, M. Wan, Nanostructures of polyaniline doped with inorganic acids. Macromolecules 35(15), 5937–5942 (2002)
G. Ćirić-Marjanović, Recent advances in polyaniline research: polymerization mechanisms, structural aspects, properties and applications. Synth. Met. 177, 1–47 (2013)
J. Stejskal et al., Polyaniline prepared in the presence of various acids: a conductivity study. Polym. Int. 53(3), 294–300 (2004)
S.H. Kim, J.H. Seong, K.W. Oh, Effect of dopant mixture on the conductivity and thermal stability of polyaniline/Nomex conductive fabric. J. Appl. Polym. Sci. 83(10), 2245–2254 (2002)
B. Belaabed, S. Lamouri, J.L. Wojkiewicz, Curing kinetics, thermomechanical and microwave behaviors of PANI-doped BSA/epoxy resin composites. Polym. J. 43(8), 683 (2011)
W.H. Jang et al., Synthesis and electrorheology of camphorsulfonic acid doped polyaniline suspensions. Colloid Polym. Sci. 279(8), 823–827 (2001)
W. Yin, E. Ruckenstein, Soluble polyaniline co-doped with dodecyl benzene sulfonic acid and hydrochloric acid. Synth. Met. 108(1), 39–46 (2000)
A. Kaya et al., The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method. Ceram. Int. 42(2), 3322–3329 (2016)
E.H. Nicollian, J.R. Brews, E.H. Nicollian, MOS (metal oxide semiconductor) physics and technology, vol. 1987 (Wiley, New York et al., 1982)
S.K. Tripathi, M. Sharma, Analysis of the forward and reverse bias IV and CV characteristics on Al/PVA: n-PbSe polymer nanocomposites Schottky diode. J. Appl. Phys. 111(7), 074513 (2012)
J. Ho, T.R. Jow, S. Boggs, Historical introduction to capacitor technology. IEEE Electr. Insul. Mag. 26(1), 20–25 (2010)
J.-H. Lin, J.-J. Zeng, Y.-J. Lin, Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment. Thin Solid Films 550, 582–586 (2014)
A. Chełkowski, Dielectric physics, vol. 9 (Elsevier, Amsterdam, 1980)
A. Dutta, C. Bharti, T.P. Sinha, AC conductivity and dielectric relaxation in CaMg1/3Nb2/3O3. Mater. Res. Bull. 43(5), 1246–1254 (2008)
M.M. Hoque et al., Dielectric relaxation and conductivity of Ba(Mg1/3Ta2/3)O3 and Ba(Zn1/3Ta2/3)O3. J. Mater. Sci. Technol. 30(4), 311–320 (2014)
S. Alptekin, A. Tataroğlu, Ş. Altındal, Dielectric, modulus and conductivity studies of Au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature. J. Mater. Sci. 30, 6853–6859 (2019)
S. Demirezen, E.E. Tanrıkulu, Ş. Altındal, The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors. Indian J. Phys. 93, 739–747 (2019)
S.O. Tan et al., Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities. J. Mater. Sci. 27(8), 8340–8347 (2016)
M. Gökçen et al., UV illumination effects on electrical characteristics of metal–polymer–semiconductor diodes fabricated with new poly (propylene glycol)-b-polystyrene block copolymer. Compos. B Eng. 57, 8–12 (2014)
A. Lösche, N.F. Mott, E.A. Davis, Electronic processes in non-crystalline materials clarendon-press, Oxford 1971 437 Seiten.£ 7, 50. Kristall Tech. 7(4), K55–K56 (1972)
S. Amrin, V.D. Deshpande, Dielectric relaxation and ac conductivity behavior of carboxyl functionalized multiwalled carbon nanotubes/poly (vinyl alcohol) composites. Physica E 87, 317–326 (2017)
X. Wu, E.S. Yang, H.L. Evans, Negative capacitance at metal-semiconductor interfaces. J. Appl. Phys. 68(6), 2845–2848 (1990)
H.N. Chandrakala, B. Ramaraj, G.M. Madhu, The influence of zinc oxide–cerium oxide nanoparticles on the structural characteristics and electrical properties of polyvinyl alcohol films. J. Mater. Sci. 47(23), 8076–8084 (2012)
Acknowledgements
This work was supported by the Karabük University Scientific Research Project Unit under Contract No: KBÜ BAP-17-DS-409. The authors would like to thank to the Karabük University Scientific Research Project Unit for their financial support.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Karaoğlan, N., Tecimer, H.U., Altındal, Ş. et al. Dielectric characterization of BSA doped-PANI interlayered metal–semiconductor structures. J Mater Sci: Mater Electron 30, 14224–14232 (2019). https://doi.org/10.1007/s10854-019-01791-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-019-01791-2