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An Analytical Modeling of Conical Gate-All-Around Tunnel Field Effect Transistor

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Abstract

In this paper a new analytical modeling of Conical Gate-All-Around Tunnel Field Effect Transistor has been proposed and verified by TCAD Simulation. The Electrostatic parameters of the conical structure are modeled from two dimensional Poisson’s Equation using Parabolic Approximation Method. The electrostatic performance of surface potential and drain current of conical structure is compared with the cylindrical structure. The present model with optimized tapering ratio of 0.9 parades enhanced electrostatic behavior compared to cylindrical structure. The results divulge the conical device model provides better ON drain current, high transconductance and reduced threshold voltage at drain side. Thus, the conical structure can be a possible replacement of cylindrical structure with optimized tapering ratio for low-power applications.

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Acknowledgments

This work was supported by Women Scientist Scheme-A, Department of Science and Technology, New Delhi, Government of India, under the Grant SR/WOS-A/ET-5/2017.

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  1. Department of Electronics and Communication, Dayananda Sagar College of Engineering, Bangalore, Karnataka, India

    Usha C & Vimala P

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  1. Usha C
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  2. Vimala P
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Correspondence to Usha C.

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C, U., P, V. An Analytical Modeling of Conical Gate-All-Around Tunnel Field Effect Transistor. Silicon 13, 2563–2568 (2021). https://doi.org/10.1007/s12633-020-00611-1

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