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Boost VS2 electrochemical reactive kinetics by regulating crystallographic planes and coupling carbon matrix for high performance sodium-ion storage

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Abstract

Vanadium disulfide (VS2) as a typical two-dimensional transition metal chalcogenide has excellent competitiveness for sodium-ion storage due to its wide layer spacing (0.575 nm), high theoretical capacity of 932 mAh·g−1 originating from multi-electron electrochemical redox. However, continuous sodiation process accompanied by crystal structural evolution and collapse cause rapid capacity decaying. Herein, novel few-layer VS2 nanosheets with open (001) crystal planes are in-situ constructed on reduced graphene oxide to solve these issues mentioned above. It indicates that few-layer VS2 provides more Na+ storage activity due to the low Na+ surface migration energy barrier on exposed crystal (001) planes. The flexible and high electronic conductivity of carbon matrix also effectively builds multi-level buffer structure and electron transport kinetics to boost the Na+ insertion/conversion reactive activity on VS2 as well as Na+ pseudocapacitance storage kinetics on edges and defects of nanosheets. Those coupling effects result in high rate capability and long cycling stability as a battery/capacitor anode. It delivers conspicuous high energy density of 81 and 40 Wh·kg−1 at power density of 118 and 10,286 W·kg−1, as well as 80% energy retention rate after 5000 cycles, confirming its great application potential in sodium-based storage devices.

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摘要

二硫化钒(VS2)作为一种典型的二维过渡金属硫族化合物, 具有较宽的层间距(0.575 nm)和源于多电子电化学氧化还原反应的932 mAh·g−1的理论容量, 在钠离子存储方面具有优异的竞争力。然而, 持续的钠化过程伴随晶体结构的演变和坍塌导致了容量的快速衰减。为了解决上述问题, 本文在还原氧化石墨烯(rGO)上原位制备了具有开放(001)晶面的新型少层VS2纳米片。由于暴露的(001)晶面上较低的Na+表面迁移能垒, 所以层数较少的VS2具有较高的Na+存储活性。碳基体的柔性和高电子导电性也有效地构建了多级缓冲结构和电子传递动力学, 促进了VS2上Na+的插入/转换反应活性以及纳米片边缘和缺陷上Na+的赝电容存储动力学。这些耦合效应使该材料用作电池/电容器负极时具有优秀的倍率性能和长循环稳定性。这种新型钠离子电容器件在功率密度为118和10286 W·kg−1时, 其能量密度分别为81和40 Wh·kg−1, 5000次循环后的保能率为80%, 表明其在钠基储能器件中具有很大的应用潜力。

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Acknowledgements

This study was financially supported by the National Natural Science Foundation of China (Nos. 52072322 and 51604250) and Sichuan Science and Technology Program (Nos. 2022YFG0294 and 2019-GH02-00052-HZ).

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Authors and Affiliations

  1. School of New Energy and Materials, Southwest Petroleum University, Chengdu, 610500, China

    Min Zeng, Ming-Shan Wang, Lin Chen, En-Zhi Li, Jun-Chen Chen, Zhi-Yuan Ma, Bing-Shu Guo, Bo Yu & Xing Li

  2. Energy Storage Research Institute, Southwest Petroleum University, Chengdu, 610500, China

    Ming-Shan Wang, En-Zhi Li, Jun-Chen Chen, Zhi-Yuan Ma, Bing-Shu Guo, Bo Yu & Xing Li

  3. Institute of Materials, China Academy of Engineering Physics, Mianyang, 621908, China

    Zhen-Liang Yang

  4. Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology, Beijing, Beijing, 100083, China

    Dan Zhou

  5. Hangzhou Yanqu Information Technology Co., Ltd., Hangzhou, 310003, China

    Hai-Jiao Xie

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  1. Min Zeng
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Correspondence to Ming-Shan Wang or Xing Li.

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Zeng, M., Wang, MS., Chen, L. et al. Boost VS2 electrochemical reactive kinetics by regulating crystallographic planes and coupling carbon matrix for high performance sodium-ion storage. Rare Met. 43, 98–112 (2024). https://doi.org/10.1007/s12598-023-02399-6

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