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Preparation and optoelectronic properties of a-IGZO thin films deposited by RF magnetron sputtering at different working pressures

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Abstract

Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest hall mobility of 17.45 cm2·V−1·s−1 is obtained at 0.3 Pa with annealing at 200 °C, while the highest carrier concentration of 2.32 × 1020 cm−3 and the lowest resistivity of 0.001568 Ω·cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A “blue shift” of UV absorption edge is observed with the increase of working pressure.

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Acknowledgments

This work was financially supported by the National Natural Science Foundation of China (No. 51571010).

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Authors and Affiliations

  1. School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China

    Rui-Xin Ma, Yu-Qin Xiao, Shi-Na Li, Yuan-Yuan Wang, Dong-Ran Li & Liang-Wei He

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  1. Rui-Xin Ma
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  2. Yu-Qin Xiao
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Correspondence to Rui-Xin Ma.

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Ma, RX., Xiao, YQ., Li, SN. et al. Preparation and optoelectronic properties of a-IGZO thin films deposited by RF magnetron sputtering at different working pressures. Rare Met. 37, 599–603 (2018). https://doi.org/10.1007/s12598-014-0314-3

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  • DOI: https://doi.org/10.1007/s12598-014-0314-3

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