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The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response

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Abstract

We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering. Optical and structural properties of the thin films were characterized using various techniques. At 6 V bias, a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained, and this responsibility dropped quickly and reached the noise floor in the visible region. Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.

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Authors and Affiliations

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Opto-electronic Technology, Beijing Jiaotong University, Beijing, 100044, China

    Jian Sun, Qian Dai, FengJuan Liu, HaiQin Huang, ZhenJun Li, XiQing Zhang & YongSheng Wang

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  1. Jian Sun
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  2. Qian Dai
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  3. FengJuan Liu
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  4. HaiQin Huang
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  5. ZhenJun Li
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  6. XiQing Zhang
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  7. YongSheng Wang
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Correspondence to XiQing Zhang.

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Sun, J., Dai, Q., Liu, F. et al. The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response. Sci. China Phys. Mech. Astron. 54, 102–105 (2011). https://doi.org/10.1007/s11433-010-4203-y

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  • DOI: https://doi.org/10.1007/s11433-010-4203-y

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