Abstract
CaCu3Ti4O12 ceramics doped with different contents of Sc2O3 (mol%, x = 0, 0.05, 0.10, 0.15, and 0.20) were prepared by the traditional solid-state reaction method. Scanning electron microscope (SEM) and X-ray diffraction (XRD) were used in the microstructural studies of the specimen, and the electrical properties were investigated. XRD results show that the Sc has no influence on the phase composition. The results from the dielectric measurements show that further increase of Sc doping could decrease the dielectric loss slightly. A high dielectric constant and low dielectric loss can be achieved when the doping concentration is 0.10 mol%.
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Acknowledgments
This work was financially supported by the National Nature Science Foundation of China (No. 61205128), the Specialized Research Fund for the Doctoral Program of Higher Education of China(No. 20123227120021), the Natural Science Foundation of Jiangsu Province (No. BK2012156), the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices (No. KFJJ201105), Application Program for Basic Research of Changzhou(No. CJ20125001), and the Universities Natural Science Research Project of Jiangsu Province (No. 13KJB430006).
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Xu, D., Zhang, K., Jiao, L. et al. Microstructure and electrical properties of Sc2O3-doped CaCu3Ti4O12 ceramics. Rare Met. 34, 178–182 (2015). https://doi.org/10.1007/s12598-013-0207-x
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DOI: https://doi.org/10.1007/s12598-013-0207-x