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Room temperature ferromagnetism of Si-doped ZnO thin films prepared by sol–gel method

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Abstract

Pure ZnO and Si-doped ZnO thin films were deposited on quartz substrate by using sol–gel spin coating process. X-ray diffraction analysis shows that all the thin films have hexagonal wurtzite structure and preferred c-axis orientation. Si-doped ZnO films show room temperature ferromagnetism (RTFM) and reach the maximum saturation magnetization value of 1.54 kA·m−1 at 3 % Si concentration. RTFM of Si-doped ZnO decreases with the increasing annealing temperature because of the formation of SiO2. Photoluminescence measurements suggest that the RTFM in Si-doped ZnO can be attributed to the defect complex related to zinc vacancies VZn and oxygen interstitials Oi.

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Acknowledgments

This study was financially supported by the National Natural Science Foundation of China (Nos. 50831002, 51271020, 51071022, and 11174031), Program for Changjiang Scholars and Innovative Research Team in University (PCSIRT) (No. IRT1106), Beijing Nova Program (No. 2011031), Beijing Municipal Natural Science Foundation (No. 2102032), and the Fundamental Research Funds for the Central Universities.

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Authors and Affiliations

  1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China

    M. Hassan Farooq, Hai-Ling Yang, Xiao-Guang Xu, Cong-Jun Ran, Jun Miao & Yong Jiang

  2. Department of Physics, School of Applied Science, University of Science and Technology Beijing, Beijing, 100083, China

    M. Yasir Rafique & Li-Qing Pan

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  1. M. Hassan Farooq
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  2. Hai-Ling Yang
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Correspondence to Xiao-Guang Xu.

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Farooq, M.H., Yang, HL., Xu, XG. et al. Room temperature ferromagnetism of Si-doped ZnO thin films prepared by sol–gel method. Rare Met. 32, 165–168 (2013). https://doi.org/10.1007/s12598-013-0048-7

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  • DOI: https://doi.org/10.1007/s12598-013-0048-7

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