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Enhanced carrier mobility in MoSe2 by pressure modulation

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Abstract

Two-dimensional (2D) materials hold great potential for the development of next-generation integrated circuits (ICs) at the atomic limit. However, it is still very challenging to build high performance devices. One of the main factors that limit the incorporation of 2D materials into IC technology is their relatively low carrier mobility. Thus, the engineering strategies that focus on optimizing performance continue to emerge. Herein, using a spatiotemporal resolved pump-probe setup, the carrier transport performance and relaxation process of few-layer and bulk MoSe2 under pressure were investigated nondestructively and simultaneously. Our results show that pressure can tune the transport performance effectively. In particular, under pressure regulation, the carrier mobility of the bulk MoSe2 increases by ∼ 4 times; meanwhile, the carrier lifetimes of the samples become shorter. Although the processes almost return to their initial state after the pressure release, it is still surprising to see that the carrier mobilities of few-layer and bulk MoSe2 are still ∼ 1.5 and 2 times enhanced, and carrier lifetimes are still shorter than the initial state. Combined with the Raman spectra under pressure, we consider that it is caused by the enhanced layer coupling and lattice compression. The combination of enhanced mobility and shortened lifetime in MoSe2 under pressure holds great potential for optoelectronic applications under the deep ocean and deep earth.

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Acknowledgements

This work was supported by the Fundamental Research Funds for the Central Universities+2021RC203, the National Natural Science Foundation of China (Nos. 11974088, 61875236, and 61975007), the Beijing Natural Science Foundation (Nos. Z190006 and 4222073), and the National Key R&D Program of China (Nos. 2021YFA1400300 and 2020YFA0711502). And thanks to the Synergetic Extreme Condition User Facility (SECUF), Chinese Academy of Sciences, for the Diamond anvil cell.

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Authors and Affiliations

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, China

    Zhiying Bai, Dawei He, Jiarong Wang, Guili Li, Jinxuan Bai, Kun Zhao, Yongsheng Wang & Xiaoxian Zhang

  2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    He Zhang & Xiaohui Yu

  3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China

    He Zhang & Xiaohui Yu

  4. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China

    Jiaqi He

  5. Songshan Lake Materials Laboratory, Dongguan, 523808, China

    Xiaohui Yu

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  1. Zhiying Bai
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  2. He Zhang
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Correspondence to Xiaohui Yu, Yongsheng Wang or Xiaoxian Zhang.

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Bai, Z., Zhang, H., He, J. et al. Enhanced carrier mobility in MoSe2 by pressure modulation. Nano Res. 16, 12738–12744 (2023). https://doi.org/10.1007/s12274-023-6143-7

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