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Single-atom Zn for boosting supercapacitor performance

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Abstract

Single-atom metal-incorporated carbon nanomaterials (CMs) have shown great potential towards broad catalytic applications. In this work, we show that N-doped porous CMs embedded with redox-able Zn atoms exhibit superior capacitive performance. High Zn (∼ 2.72 at.%)/N (∼ 12.51 at.%) doping were realized by incorporating Zn2+ and benzamide into the condensation and carbonization of formamide and subsequent annealing at 900 °C. The Zn and N species are mutually benefited during the formation of ZnN4 motif. The as-obtained Zn1NC material affords a very large capacitance of 621 F·g−1 (at 0.1 A·g−1), superior rate capability (∼ 65% retention at 100 A·g−1), and excellent cycling stability (0.00044% per cycle at 10 A·g−1). These merits are attributed to the high Zn/N loading, atomic Zn-boosted pseudocapacitive behavior, large specific surface area (∼ 1,085 m2·g−1), and rich pore hierarchy, thus ensuring both large pseudo-capacitance (e.g., ∼ 37.9% at 10 mV·s−1) and double-layer capacitance. Besides of establishing a new type of high Zn/N-loading carbon materials, our work uncovers the capacitive roles of atomically dispersed metals in CMs.

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Acknowledgments

This work was financially supported by the National Natural Science Foundation of China (Nos. 22071137 and 21701101), the Shandong Scientific Research Awards Foundation for Outstanding Young Scientists (No. ZR2018JL010), the Natural Science Foundation of Shandong Province (No. ZR2020MB045), and the Program for Tsingtao Al-ion Power and Energy-storage Battery Research Team in the University (No. 17-2-1-1-zhc).

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Li, Z., Wang, D., Li, H. et al. Single-atom Zn for boosting supercapacitor performance. Nano Res. 15, 1715–1724 (2022). https://doi.org/10.1007/s12274-021-3839-4

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