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SnSe field-effect transistors with improved electrical properties

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Abstract

Low-symmetry two-dimensional (2D) materials, with unique in-plane direction-dependent optical, electrical, and thermoelectric properties, have been intensively studied for their potential application values in advanced electronic and optoelectronic devices. However, since anisotropic 2D materials are highly sensitive to the environmental factors, researches on their high-performance field-effect transistors (FETs) are still limited. Here, we report a high-performance SnSe FET based on a van der Waals (vdWs) heterostructure of SnSe encapsulated in hexagonal boron nitride (hBN) together with graphene contacts. The device exhibits a high on/off ratio exceeding 1 × 109, and a carrier mobility of 118 cm2·V−1·s−1. Our work highlights low-symmetry 2D SnSe holds potential to be used for designing excellent electronic devices.

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Acknowledgements

This work is supported by the National Natural Science Foundation of China (No. 51972007).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Beihang University, Beijing, 100191, China

    Shuai Liu, Yujia Chen, Shengxue Yang & Chengbao Jiang

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  1. Shuai Liu
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  2. Yujia Chen
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  3. Shengxue Yang
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  4. Chengbao Jiang
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Correspondence to Shengxue Yang or Chengbao Jiang.

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Liu, S., Chen, Y., Yang, S. et al. SnSe field-effect transistors with improved electrical properties. Nano Res. 15, 1532–1537 (2022). https://doi.org/10.1007/s12274-021-3698-z

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